Used VARIAN 160XP #9198478 for sale

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ID: 9198478
Wafer Size: 6"
Vintage: 1995
Implanter, 6" Maximum beam energy: 160kV Energy range: 10kV–160kV B+: 5mA BF2+: 7mA As+: 10mA P+: 10mA Sb+: 5mA (2) Chambers implant process Source Beam-line End station 1 & 2 Dual faraday system: Flood gun EFG Charge control system Modules: Mechanical module HEPA Filter flow hood Remote console Gas box End station module Electrical console High voltage power supply Dopant source Argon (High pressure) Ion source type: Solid source: Antimony (3) Gas sources: Boron HP Arsine HP Phosphine HP Pumps: VARIAN Diffusion pump EDWARDS IQDP80 EDWARDS IQDP40 (4) CT8 Cryopumps CDA Pressure 100 PSI N2 Pressure 20 PSI (4) Toxic needle valve controlled gas systems Power supply: 208 VAC, 60 kVA 1995 vintage.
VARIAN 160XP is a state-of-the-art ion implantation and monitoring system. It is ideal for complex semiconductor applications and helps in optimizing the quality of a wide range of semiconductor materials. The machine works by sending a flow of positive ions, typically controlled through a fixed accelerator within the system. These ions are then injected into a substrate, typically silicon or germanium, at low energies. The result is a controlled amount of doping within the substrate. With VARIAN 160 XP, it is possible to achieve high levels of doping control, as the acceleration voltage and beam current can be adjusted for each implant. This provides greater control and precision in the implant process. In order to maximize ion implantation efficiency, 160XP is designed to include integrated process diagnostics and monitoring. It features a proprietary beam monitor that provides continuous feedback on the accuracy and performance of the process. This allows users to easily adjust and readjust ion implant beam parameters while their experiment is still in progress, without having to repeat it. In addition to these features, 160 XP has a number of useful tools and software packages for optimizing the process. These include dose rate optimization to ensure optimum implantation rates, automated programming of the beam parameters to maximize the throughput, and advanced software tools for data collection. The system also includes auto-focus capabilities, which enable the user to accurately measure and adjust the focus of the ion beam. Overall, VARIAN 160XP is a state-of-the-art ion implanter and monitor. It is designed for maximum efficiency and accuracy, and features advanced software and control capabilities. It is an ideal and reliable choice for any laboratory working with semiconductor material and in need of controlled doping.
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