Used VARIAN 300XP #9390703 for sale
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ID: 9390703
Wafer Size: 6"
Vintage: 2004
Implanter, 6"
Dual end stations
Implant angle: 0°-7°
Source type: Freeman ion source
BROOKHAVEN X and Y Scan master amplifiers
Beam energy probe: 0-200 kV
Remote beam monitor on control console
Extraction: 0-35 kV
Standard 300XP grounded platen
Corner cup integration
ALCATEL / ADIXEN / PFEIFFER 2012 Source rough pump, 3 Phase
ALCATEL / ADIXEN / PFEIFFER 2012 / 2008 B/L Rough pump, Single phase
ALCATEL / ADIXEN / PFEIFFER 2012 / 2008 E/S Rough pump ,Single phase
ALCATEL / ADIXEN / PFEIFFER 2012 / 2008 Load lock pump, Single phase
VARIAN VHS 4 Diffusion source Hi-Vac pump
VARIAN B/L Hi-Vac pump with CTI-8 Cryo pump
VARIAN E/S Hi-Vac pump with CTI-8 Cryo pump
CTI Compressors
Acceleration / Deceleration power supply kit: -2 kV
AMU: 0-124
Process control terminal: 486 with remote control console
XP scan controller dosimetry system
SDS control system
(4) Gas systems:
(3) MFCs
HP for boron
Fiber optic control interface:
High voltage terminal
Ground level controls
2004 vintage.
VARIAN 300XP is a high-performance ion implanter and monitor designed for use in the semiconductor industry. This device is capable of implanting ions into a wide variety of targets at high speeds with precision. VARIAN 300 XP is a compact and versatile machine that can provide a variety of detailed process applications with the help of proprietary source configuration and manipulation software. The device utilizes a three-magnet design and a six-axis motion equipment for precise and accurate ion implantation. Its technology allows for the control of accelerating beam widths down to 0.1 mm and allows for precise beam spot sizes as small as 0.03 mm. In addition, the beam current range extends from 0.01-50 µA. It features a high-sensitivity continuous beam current monitor with a dynamic range of 1-500 pm. This device is designed to work within a wide process range, with a varying temperature range of 20-400°C. 300XP features a two-mode ion source that can be used to choose the desired beam energy and acceleration, and to control the beam angle. The ion source can be tuned for either oxidation-resistant modes or for maximum dissolution modes. The device has an automatic loading system that can accurately detect the property of the substrate being implanted and make appropriate adjustments to the operation and beam collimation. 300 XP can also measure a variety of doses and energies. The device has an advanced control unit that enables precise control of the beam width and the beam current. Its data acquisition machine can measure dose and energy simultaneously with the help of an upgraded pulsed source. The tool can also generate a variety of real-time graphs and reports for analysis of process yields and output. VARIAN 300XP is an efficient and reliable asset that can provide a variety of implantation solutions for the semiconductor industry. Its efficient and precise design makes it the perfect choice for various applications that require precision and accuracy. Its versatility, process range, and flexibility make it suitable for all kinds of processes in the semiconductor industry.
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