Used VARIAN 350D #9409512 for sale

VARIAN 350D Ion Implanter and Monitor equipment is a high-performance ion implantation system developed by semiconductor equipment manufacturer VARIAN, Inc. This device is designed to facilitate the implantation of ions into materials to alter their physical and electrical properties. It uses a combination of beam extraction, mass selection and energy filtering mechanisms to accurately inject ions into the target material. VARIAN 350 D is a fully automated unit, using highly precise digital control technology to ensure consistent ion implantation performance. It has four basic components - the source, bias, beamline, and target. The ion source is responsible for creating the desired ion beam, which is then directed by the beamline component. The bias component alters the trajectory of the ion beam using electrostatic fields, and the target material is the material that the ions are implanting into. 350D includes advanced safety features and diagnostics systems, which enable users to monitor implantation parameters in real-time. The machine is also capable of self-calibration and performance verification, ensuring that the implant quality is consistently perfect. In addition, it can be equipped with a variety of ion injectors and beam monitors for specialized and high-accuracy requirements. The implantation process is controlled by a VARIAN-developed control software, which allows users to monitor and adjust implantation parameters if needed. Furthermore, 350 D is capable of handling diverse wafer sizes, from 0.1mm to 300mm, making it suitable for a wide range of applications. It can also handle various ion species and beam currents up to 20mA, allowing users to safely implant ions into their target materials. VARIAN 350D is reliable and efficient, minimizing the impact on productivity while providing excellent implantation results. Its multiple safety mechanisms ensure that the device is safe to operate, and its diagnostics features provide users with comprehensive feedback on implantation performance. Its flexibility and accuracy makes it an ideal choice for ion implantation and its variably powered source provides a wide range of beam current that can be reliably controlled.