Used VARIAN 400-10 #9156375 for sale

VARIAN 400-10 is a powerful ion implanter and monitor designed to implant ions into semiconductor devices with precision. The ion implanter is capable of depositing ions into a wide range of materials, including metals, oxides, nitrides, and carbides. The highly precise control of the device is achieved by the rapid adjustment capabilities of its three primary components: the ion source, the mass filter, and the beam guidance equipment. The ion source of 400-10 is a highly-power arc discharge ion source provides high-energy levels and uniform spatial ion distribution. It has the ability to direct the ion beam down to 30 nm spot sizes. The background gas used to achieve the ion beam can be adjusted, allowing for precise control over the reproducibility of ion implantation. The mass filter can select the range of ions to be implanted, eliminating the undesirable ones from the beam, allowing for fine tuning of the material composition. The beam guidance system provides an adjustable electric field to guide the ions into the material at predefined angles. The unit offers a variety of features that help to ensure that the ion implantation process is reproducible and precise. These features include beam energy control, dynamic beam scan control, radiation-resistant materials, and a low-noise power supply. The pulse-modulated beam control helps to ensure the uniformity of the implant dose, as well as providing precise control over implantation angle. The machine also offers automatic end-of-dose sensing that helps to ensure the accurate implant rate. VARIAN 400-10 also monitors the ion implanter in real time, providing a constant visual of the beam's position and status. This allows for monitoring of the beam's energy, profile, and current, as well as the implant rate and profile. The data collected from the monitors can be used to confirm the correctness of implantation conditions and ensure that the material has been correctly implanted. Overall, 400-10 is an advanced ion implanter and monitor that provides the accuracy, precision, and reproducibility necessary for successful semiconductor device implantation. Its features allow for the precise control over the beam's direction, energy, and profile, enabling the ideal material composition for specific applications.