Used VARIAN 5394001 #9260504 for sale

VARIAN 5394001 is a high-performance ion implanter and monitor designed for use in advanced fabrication of integrated circuits. This device incorporates advanced controls and monitors, such as a 20-channel digital I/O controller that enables it to achieve precise and predictable control of implant current, voltage, and energy. The equipment is also designed to monitor and measure the distribution of implant gas pressure in the chamber during the ion implantation process. 5394001 integrates many features for optimized performance in the marketplace. This includes a series of individual process components, such as a sourceless type cathode, a multiple cassette ion source, an ion beam gate, a scan platform, and a multiple axis scanner. Additionally, the system may be configured to switch ion species of varying enhanced steering capabilities. The high-precision XYZ stage has an operational travel of 6 inches and provides excellent stability for multi-location Wafer Implanting. Additional features of VARIAN 5394001 include its auto-tune technology which helps to ensure consistent and predictable implant process results. This unit also incorporates advanced diagnostic tools such as a Chamber Gas Analysis Machine, a Chamber Performance Monitor, and a Training and Operator Management Tool. 5394001 offers best-in-class monitoring with integrated software and hardware. Its auto-tune technology coupled with a sophisticated control platform aid in providing users with excellent control of an implant job and superior implant results. The asset is also designed to offer superior performance in terms of temperature stability, uniformity, and repeatability. VARIAN 5394001 is a reliable and robust model ideally suited for advanced integrated circuit fabrication. This ion implanter and monitor offers excellent performance and precision along with superior monitoring capabilities. Its advanced controls and monitors, along with auto-tune and diagnostic features allow it to provide the best-in-class performance for ion implantation.