Used VARIAN / AMAT / APPLIED MATERIALS VIISta PLAD #9359237 for sale
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ID: 9359237
Wafer Size: 12"
Vintage: 2008
Ultra high dose plasma implanter, 12"
2008 vintage.
VARIAN / AMAT / APPLIED MATERIALS VIISta PLAD is an advanced ion implanter and monitor used for semiconductor fabrication. It is a tool used to control the doping of semiconductor materials by creating electrical charge patterns at very high precision levels. AMAT VIISta PLAD implementation takes a variety of semiconductor materials and implants them with certain doses of ions to create predetermined electrical channel patterns which then produce devices such as transistors or diodes. The profile of the ions which VARIAN VIISta PLAD can use includes, but is not limited to, boron, nitrogen, arsenic, phosphorus, and silicon which are all useful in various ways for various applications. APPLIED MATERIALS VIISta PLAD has multiple ion implanter tools and monitors that are all designed to increase device layer consistency, reduce costs, and maintain device performance. One of the primary tools of VIISta PLAD is the Energy and Angle Control Equipment (EACS). The EACS allows for precise selection of ion energy and angular distributions which are essential for a wide range of doping levels. It is also capable of adjusting the acceleration energy, dose rate, and beam spot size. Another primary tool of VARIAN / AMAT / APPLIED MATERIALS VIISta PLAD is the Beam Scanning System (BSS) which makes efficient use of all beam scanning angles. This unit also allows for high precision operation and patterns for achieving various doses over large areas. AMAT VIISta PLAD is also equipped with a number of additional technology tools such as a gas mitigation machine, an injector interface for different gas types, an ion source alignment tool, an electrostatic chuck, and a variety of ion sources. These tools work together to help maintain a stable operation over time and ensure the accuracy and reliability of the doping process. Overall, VARIAN VIISta PLAD from AMAT is a highly advanced and sophisticated ion implanter and monitor asset. It can accurately and precisely control the doping of semiconductor materials to create specific electrical charge patterns, all while keeping the costs and process time low.
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