Used VARIAN E1000 #145999 for sale
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ID: 145999
Ion implanter, 8"
Maximum beam energy: 200kV
Facilities:
Electrical:
380-460V, 3-phase, 4-wire, 50kVA
100A Main CB, 18,000 IC, 60Hz
25A Max single load
Water:
Inlet pressure: 40 to 100 psi (275.8 to 689.5 kPa)
Pressure drop: 40 psi (275.8 kPa)
Flow rate: 18 gpm minimum (68.1 L/min)
Inlet temperature range: 50 to 68°F (10 to 20°C)
Nitrogen pressure range: 50 to 100 psi (334.7 to 689.5 kPa)
Air pressure range range: 100 to 125 psi (689.5 to 861.8 kPa)
Exhaust:
Flow rate: 1,200 cfm minimum (34.0 m^3/min)
Pressure drop: 1.5 in H2O (373.36 Pa)
Tool shutdown Q1 2009
Currently installed and located in cleanroom in fab
1997 vintage.
VARIAN E1000 ion implanter and monitor is a high-performance ion implanter and monitor from VARIAN Semiconductor Equipment. The device it is designed to implant dopants and other ions into semiconductor chips and materials in order to improve the electrical properties of the material. It is commonly used for doping silicon wafers to make chips and components. VARIAN E-1000 ion implanter has a wide range of features, including advanced beam current and energy control, advanced angle control, advanced spacecharge compensation, and Advanced End-of-Run (EOR) technology. E 1000 has an energy range of up to 30 keV, with a rapid rise/fall time, allowing for rapid switch-width adjustability. VARIAN E 1000 also offers an on-board beam chamber to minimize the number of component chamber changes. E-1000 has a high dose rate, providing up to 250mA/cm2 within 200ms of the begin of run. This high-dose rate combined with its Advanced End-of-Run technology, allows uniform dose distributions to be achieved in all process cells, improving overall process uniformity. E1000 can passivate multiple structures at a single run, as well as multi-level structures, delivering uniform, nominally shaped dose distributions. VARIAN E1000 has also been designed to maximize up-time and throughput. Automated tool qualification checks can be carried out prior to wafer processing and rapid beam condition switching allows for rapid changeover from implant to implant. VARIAN E-1000's advanced advanced beam tuning and control, along with the advanced spacecharge compensation and advanced angle control, allows for more precise implantation than ever before. In addition to the benefits of fast processing and precise implants, E 1000 also provides an interactive, graphical user interface to simplify operation and monitoring of wafer implants. This user interface allows operators to quickly access and modify VARIAN E 1000's settings and modify the implantation parameters to meet the customer's needs. Overall, E-1000 ion implanter and monitor is an advanced, high-performance tool to implant and monitor dopants and other ions into semiconductor chips and materials. It is capable of delivering precise and uniform implants in a wide variety of process cells, allowing for efficient chip manufacture. With its user-friendly interface, rapid switching between implantation parameters and automated tool qualification checks, E1000 can maximize production up-time and throughput.
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