Used VARIAN E1000 #158386 for sale
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ID: 158386
Implanter chamber control rack
Includes:
Varian Plasma Flood and Bias Supply E11020501
Varian 112729001
Varian 113136001 (has been disassembled)
MKS Baratron 122AA-00010DB
Brooks 5850E Mass Flow Controller 9408HC034101
High Yield Technology S/N# 9412S75
Qty.4, Vat Gate Valve (10 inch inside diameter)
DOES NOT Include:
Kollmorgen DC Brushless Amplifier BDS3-230/55-28-220
Kollmorgen Power Supply PSR3-230/50-07-003
Qty.3, Infranor Resolver SMTBS
Mavilor Motors SE0718-07057.
VARIAN E1000 is an ion implanter and monitor, highly capable of achieving accurate ion implantation profiles for the most demanding semiconductor research and manufacturing operations. VARIAN E-1000 is designed to implant ions at high electric field and fluence levels necessary for incorporation into a range of materials. The implanter features a high reproducibility of beam energy distribution, fluence profiles and monitor sensitivity at energy levels. The equipment can be tailored to implant ion species of either positive or negative charge ranging from hydrogen to uranium, while the implant energy and beam current ranges allow a diverse range of implant energies and doses to be attained. Through efficient beam optics, E 1000 system can produce beams of strictly defined species and energies with high repeatability on substrates greater than the 12 inch design limit. The beam current is adjustable over a wide range and maintained at a stable level during implantation. VARIAN E 1000 has a beam analysis and imaging unit for characterization of implanted species. This machine contains a quartz crystal microbalance to measure ion current and also a Faraday cup whose operation mode shows the beam current before and after the accelerating gap. The profile of implantation is monitored in situ by an innovative Dual Collector Detector (DCD). The DCD can measure both ions with an energy range of up to 40KeV and electrons up to 1MeV. This state-of-the-art tool allows for not only the adjustment of implantation profile but also the monitoring of optimum parameters and condition during the process. E-1000 is designed with self-monitoring feedback control systems to guarantee the highest implanted dose accuracy and precision. The feedback control asset uses a Faraday cage as part of the beam formation and sensing model to increase resolution and accuracy while reducing dose rate and energy spread variation. This ensures that the desired dose rate and energy spread is continually maintained during implantation. The components of E1000 equipment include a beam source, particle accelerator, beam optics system, dual collector detector, ion beam current analyzer and the beam formation unit. The machine also includes an automatic windows interface for ease of operation. This tool eliminates the overhead of having additional operators for the implantation process, further reducing the cost of ownership. VARIAN E1000 is a multifaceted asset for high accuracy, efficient and reproducible ion implantation that serves a wide range of applications. The advanced and innovative features of this model have enabled researchers and manufacturers in the semiconductor industry to develop even the most complex projects for commercial application. With the flexibility of its design, and high accuracy and precision of its results, VARIAN E-1000 is the perfect solution for modern implantation requirements.
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