Used VARIAN E1000 #9054294 for sale

VARIAN E1000 is an ion implanter and monitor designed for high throughput, accurate implantation of high doses of ions into semiconductor wafers. The implanter can be used to effectively dope wafers with gallium, silicon, phosphorus and other ions to vary electrical characteristics on the wafer. Its high-resolution beam monitoring equipment allows precise control of ion dosage and distribution to achieve optimal electrical results. VARIAN E-1000 begins with a source chamber for loading ion sources. There are three separate sources available, which work together to scan the entire wafer surface. The three sources are a single beam ion source, a slit beam ion source, and a multi-beam ion source. The single beam source is intended for homogeneous implantation over a large surface area, while the slit and multi-beam sources are used for patterned implantation or implantation in small regions. The accelerator module then delivers the ion beam to the ionization chamber. This chamber is specifically designed to confine the ion beam and ensure high accuracy in implantation. It is equipped with several features, such as beam collimators and beam sweeps, as well as an ion equivalent monitor to record the exact number of ions that have been implanted. Once the ions have been implanted, the wafer is moved to the amorphous deposition chamber. This chamber allows for the deposition of non-conductive layers on the surface of the wafer, improving the electrical characteristics of the chip. Finally, E 1000 has a wafer inspection chamber for inspecting the implanted chips. This chamber is equipped with a laser surface inspection system to verify the electrical characteristics of the doped chips, as well as an optical microscope to view the fine details of the features on the chips. Overall, E1000 is an extremely powerful, accurate, and reliable implantation and monitoring unit, capable of precisely controlling the implantation of high doses of ions into semiconductor wafers. Its various features and chambers provide a high-throughput, accurate machine for doped semiconductor fabrication.