Used VARIAN E1000172 / E1000173B #9163521 for sale

VARIAN E1000172 / E1000173B ion implanter and monitor is a piece of advanced equipment designed to precisely implant ions into a material, such as semiconductor wafers. It is capable of efficiently implanting ions along any substrate in order to create desired doping profiles, physical characteristics and electro-magnetic values. E1000172 / E1000173B is equipped with an ion beam source, an energy analyzing equipment, and a computer control unit. The beam source is accelerated by an electro-magnetic field and is then passed through a shield to the analyze station. There, ions of various charge-to-mass ratios are identified and separated by varying the electric field strength. After selection, the beam is separated into two parts, one for implantation and the other for monitoring the energy of the implanted ions. The controlling computer then regulates the beam intensity to ensure that the ion dose is accurate and repeatable without compromising precision. The monitor allows for precise control of the ion dose through precise concurrent measurement of the current ion beam and the implanted material. The implant parameters such as current, energy spread, ion species, and angle of incidence can all be adjusted depending on the material being implanted and the desired characteristics that need to be achieved. An automated control system is used to constantly monitor these parameters and make any necessary adjustments for process optimization. VARIAN E1000172 / E1000173B also features an ion-implant monitor unit to ensure implanted charge rates remain in compliance with predetermined parameters. The machine is designed to detect any hazardous radiation levels, and immediately shut down the beam if necessary. Additionally, a vacuum safety interlock tool is used to prevent particles from damaging the asset. Overall, E1000172 / E1000173B is a reliable piece of technology used for a wide range of ion implantation applications. It is designed to provide fast, efficient and precise ion implanting. Its advanced control model ensures that implanted charges remain in compliance with predetermined parameters for optimal results.