Used VARIAN E1000HP #9232479 for sale

Name: VARIAN E1000HP
Brand: VARIAN
SKU: 9232479
Availability: InStock

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Ion Implanters & Monitors

Manufacturer

VARIAN

Model

E1000HP

ID: 9232479

Wafer Size: 8"

High current implanter, 8" Enhance type Carriage motor type: N6 Motor Turbo (VT250) end station pump High-pressure gas EDWARDS QDP80 Terminal dry pump EDWARDS QDP80 Chamber dry pump VARIAN V1800 Source turbo pump (4) CTI 250F Chamber cryo pumps Chamber cryo pump option Main power / Frequency: 280 PD / 208 PD Auto top utility supply Type: PFG Cusp source assy Type: Hook site Y2K Completion Hi-voltage probe Signal tower Energy: Operational: 2 ~ 200 keV B+: 10~200 keV, As+ P+: 40~200 keV Stability: ±10% After warm up Dopant species: 11B+, 49BF₂+, 75As+, 31P+, 121Sb+ Implant dose accuracy: Specification range: 5E11-5E16 Uniformity (At 7° Tilt angle): 1δ ≤0.5% Repeatability (At 7° Tilt angle): 1δ ≤0.7% Wafer charge neutralization: Plasma flood gun with interlocks on current Gas flow rate & beam spot size Wafer handling: Horizontal loading Slot-to-slot integrity Backside pick and place (75) Wafer loads (3) Independent vacuum load locks Dummy wafer handling capability Throughput: Mechanical Limit/30 sec implant at 7° tilt 1D Profiler (Wafer per hour): 230 / 210 Wafers per disc: 18 / 13 Process angles: Tilt: +7 / -7° Twist: 0°-360° ±2° Automatic recipe control Wafer cooling: ≤100° C at 3000 Watts Wafer breaks: 1:20,000 Particulate control: ≥0.2 um Particles ≤0.15 Added per cm² (Mean value) Utility: N2: 50~100 psi Size: 3/8" NPT Air: 90~125 psi Size: 3/8" NPT PCW: 40~100 psi (In/Out) Size: 3/4" NPT Temperature: 10~20° C Exhaust: Toxic: 34000 PVC, 5" (2) PVC, 8" NW40 Power: 460/445/415/380 V, 65/70/75/80 kVA, 3 Phase, 4 wires.

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VARIAN E1000HP is an ion implanter & monitor designed to provide accurate and reliable ion implanting services to the semiconductor industry. VARIAN E1000 HP is a highly accurate, fully automated system that can process a variety of substrates including Si and SiGe. It is designed to allow for highly precise control over the amount of ion doses, beam angle and ion energy during the implant process. E-1000 HP is equipped with an ion source which can produce ion beams of various energies. It also features a vacuum chamber that is capable of withstanding high rates of pressure, making it suitable for a variety of implantation techniques. The chamber includes an enclosed target region which is protected against exposure to the beam, potentially damaging the target surface. The system also features an advanced ion beam monitor which is able to measure the beam position, size, current, and an array of beam parameters which enable the optimization of the implant process. It also includes a top-mounted positioner that allows users to accurately place the substrate in the target region. Furthermore, E1000HP contains a reliable RF generator that is capable of producing both low and high frequency power for ion acceleration. It also has an advanced focusing lens that is able to maintain a constant ion beam size. Additionally, the unit is equipped with a high power RF source and dedicated monitor which allow users to control the beam energy and monitor the amount of ion dosage. Finally, E1000 HP is designed to provide reliable performance and consistency. It is built with advanced safety features that help protect against radiation exposure and ensure operator safety during the implant process. The system is also easy to setup and use, making it ideal for a wide range of applications.