Used VARIAN E220 #9230245 for sale
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ID: 9230245
Wafer Size: 6"
Vintage: 1994
Medium current ion implanter, 6"
Signal tower
Production wafer: (2) Wafers (P.P+ type)
Platen type: M-clamp
Loadlock: Left & right (P.P+ type)
CVCF Option: Interlock
System vacuum:
Ion source chamber: 1.1E-6T
Beamline chamber: 8.5E-7T, 4.2E-7
End station chamber: 1.8E-7
Pumps:
Terminal:
Dry pump
Turbo pump
Controller
E/S Chamber:
Dry pump
Dry pump / Booster pump
Cryo pump
L/L Cryo
Make / Model / Description
EBARA / 40x20 / Terminal dry
LEYBOLD / Mag W 1300 / Source TMP
LEYBOLD / Mag Drive / Source TMPC
PFEIFFER / - / Resol. TMP
PFEIFFER / - / Resol. TMPC
PFEIFFER / TMH 520 IS / Beamline TMP
PFEIFFER / - / Beamline TMPC
CTI / Cryotorr / End station C/P
GEN 1 CRYOPUMP 4F / - / Left loadlock
GEN 1 CRYOPUMP 4F / - / Right loadlock
EBARA / 40x20 / End station dry
CTI / 9600 / Cryo compressor
Process gas:
High pressure:
AsH3
PH3
Ar(N2)
BF3: SDS X2
High voltage range:
Extraction power supply: 0 keV~40 keV
Acceleration power supply: 0 keV~180 keV
Power supplies (Assembly):
Arc: 300VDC, 15A
Filament: 7.5VDC, 200A
Source magnet: 20V, 50A
Extraction: 40kV (Max:75kV), 50mA
Extraction suppression: -2kV, 50mA
Analyzer magnet: 40V, 125A (Max:150A)
Mirror power supply: 30kV, 2.5mA
Quadrupole magnet #1: 20V, 50A
Quadrupole magnet #2: 20V, 50A
Scan generator: -30kV, 10mA
Crucible (Vaporizer) power supply: 60kV, 1.2mA
Dipole lens magnet: 40V, 125A (Max:150A)
Acceleration: 180kV, 5mA (-> 8mA)
Acceleration suppression: -5kV, 5mA
Controller (Assembly):
Left arm servo
Right arm servo
Vacuum gauge
Scan faraday
Platen tilt servo
Vertical lift orienter
Uniformity
Liner motor servo amp
Orienter
Left elevator
Right elevator
Dose integrator
DI Temp monitor
Options:
Gas box type: 2-High pressure bottle, 2-SDS Insert
Source type: Bernas no vaporizer
Utilities:
Power: 208 VAC, 3-Phase, 5-wires, 45 kVA, 120 FLA
Air: 100~150 PSI
N2: 40~150 PSI
Cooling water: 60~150 PSI, temp: 4~21°C
1994 vintage.
VARIAN E220 is a state-of-the-art ion implanter monitor used for engineered thin-film production in the semiconductor industry. This equipment utilizes a self-correcting method to ensure precise ion placement while monitoring the dosage variation throughout the process. VARIAN E-220 makes use of three components which include an ion source, an implanter chamber, and a dosage monitor. The ion source is used to accelerate ions in a beam towards the sample. The implanter chamber houses the sample and induces an electrical field to act on the ions as they pass through the chamber. This electrical field determines the energy and direction of the ions, which is essential for precise engineering thin-films. The dose monitor is used to make sure that the dosage of the ions is controlled and monitored to ensure it does not exceed the desired value for the process. E 220 includes a power supply for controlling the voltage level of the ion beam, as well as an array of sensors that monitor the beam's power, position, and intensity. The system is also equipped with a device that regulates the spread of particles allowing only those within a certain range to pass through. This makes sure that the particles used in the process are within desired parameters for the thin film production. Finally, VARIAN E 220 is designed with an advanced intelligent control unit that allows for easy and intuitive operation. This allows operators to easily set the desired parameters for the thin film production and closely monitor the process without having to manually adjust values. Overall, E220 is an effective and reliable tool for engineered thin-film production thanks to its precise control of ion placement and dosage, advanced control machine, and sensor array. This tool allows manufacturers to precisely engineer thin films with minimal cost and effort.
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