Used VARIAN / TEL / TOKYO ELECTRON 350D #293652051 for sale

ID: 293652051
Wafer Size: 6"
Ion implanter, 6".
VARIAN / TEL / TOKYO ELECTRON 350D is an ion implanter and monitor designed to provide precision implanting of semiconductors. It is capable of both single and multiple ion implant stages, making it a powerful choice for any production process. The implanter is equipped with a horizontal wafer handling system, robust double-sided precision control of the scan angle, wafer temperature control, and adjustable high-voltage parameters. Additionally, TEL 350D is equipped with a high performance digital ion beam analyzer for dose control and uniformity. VARIAN 350D has a range of adjustable parameters and is capable of implanting both positive and negative ions. It is also equipped with a total of 10 channels in order to allow for simultaneous operations of different material types and isotopes. The double-sided control uses a unique C-shaped beam collimator for enhanced accuracy of the scan angle, and the uniformity of the implanted dose is improved with adjustable voltage and current parameters. TOKYO ELECTRON 350D allows for short implanting of two to four-millimetre diameters and its versatility makes it suitable for implanting a variety of materials, such as phosphorus, arsenic, boron, indium, and gallium. The wafer handling system of 350D helps to ensure the highest level of quality control with its automated centring, alignment and scanning capabilities. Additionally, wafer temperature control allows for uniform surfaces and improved stability throughout the implanting process. The digital ion beam analyzer provides dose control and uniformity as well as real-time feedback, allowing for increased accuracy. Finally, VARIAN / TEL / TOKYO ELECTRON 350D is equipped with an industry-leading monitoring system for 360° beam coverage, ensuring a fully traceable implanting process with an in-depth report generated upon completion of the operations. This unprecedented level of control makes TEL 350D a powerful choice for precision implanting of semiconductors.
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