Used VARIAN VIISta PLAD #293804201 for sale

VARIAN VIISta PLAD is an ion implanter and monitor designed for professional use in semiconductor fabrication and research. This high end device offers unparalleled control and accuracy of ion implanting while also providing superior analytical tools for post-implant process control. The ion implanter portion of this device is a pressure controlled ion beam source that uses a plasma diode to generate high-energy ions which are deflected and accelerated into the substrate. It can accurately dose a wide range of ions into the substrate material including phosphorus, boron, arsenic, and antimony. System definitions for ion implantation processes are created using a graphical user interface which provides real-time status monitoring. Furthermore, the multi-purpose diagnostic system allows for both in-situ analysis of the ion beam during implantation, as well as post-implant monitoring. The monitor portion of the system features Pattern Recognition recognizer hardware and software which allows users to quickly analyze process step stability and detect any anomalies and instabilities. This helps in the optimization and reproducibility of the ion implantation processes. Furthermore, process monitoring techniques such as Ion Induced End Point Measurement (IIePm) enable increased ion implantation yield and improved process stability. VIISta PLAD comes with a user friendly graphical display and is designed to be both reliable and durable. It is made using advanced technologies and state of the art components which ensure superior quality and long life. Furthermore, the device is available with various optional packages which allows users to add custom capabilities. For added safety, the unit also features various safety features such as over-pressure shut off and an anti-microbial filter. In conclusion, VARIAN VIISta PLAD is an advanced and reliable ion implanter and monitor that offers superior accuracy, control, and reliability. This device provides users with an unequalled level of precision and control over the entire ion implantation process while also providing detailed reports for process optimization.