Used LAM STRATA-3 #9311457 for sale

LAM STRATA-3 is an ion milling equipment that enables researchers to produce dielectric, metal, or semiconductor films with excellent thickness uniformity in a reliable, repeatable process. It is ideal for both pulsed RF and DC sputtering processes. This system is designed to produce patterns, notches, or vias with aspect ratios greater than 0.15:1, where the via/opening width is greater than the via/opening thickness. It has two different ion sources: a high-current 30+kV arc ion source and a high-current DC ion source. It also includes a built-in end-point detection unit that helps for precise control of ion sputtering. STRATA-3 ion milling machine consists of a process chamber, sample transfer, gate valve, and exhaust valve. The process chamber is a vacuum chamber made of aluminum and stainless steel and can be used to sputter up to 6-inch wafers with substrate temperatures ranging from -260°C to +263°C. It is well-suited for the deposition of dielectric, diffusion barrier, and copper seed layers, as well as other processes such as plasma etching. The sample transfer is an automated transfer tool for efficient control of the ion milling process. It includes a temperature monitor with adjustable heater for controlling the substrate temperature. Finally, the gate and exhaust valves enable precise control of the asset's pressure. LAM STRATA-3 ion milling model enables users to create various patterns and features that are difficult or impossible to achieve with other etching techniques. This equipment enables precise control of the etching process to achieve the desired profile morphology, and also provides greater depth of feature. Additionally, the precision control of the etching depth helps material engineers to ensure that the thin film can withstand the specific desired environment. Some of the key features of this system include fast etching rates of up to 2000 μm/hr, reproducibility of micron-level etching profiles, and precise control of the etching depths and dimensions. In addition, it has a module added for the high-voltage 30+kV arc ion source which can be used to sputter without the gate valve.