Used CANON MPA 600 FA #293608401 for sale

It looks like this item has already been sold. Check similar products below or contact us and our experienced team will find it for you.

Manufacturer
CANON
Model
MPA 600 FA
ID: 293608401
Wafer Size: 6"
Vintage: 1988
Mask aligner, 6" Reduction ratio: 1x Scaning Exposure field: R95 mm Resolution: 1.8 - 2.0 µm Focus: ≤ ± 2 µm Depth focus: ≥ ± 8 um (1.8 ~ 2.0 µm line and space) Mechanical: Prealignment accuracy: Within Φ 100 um Illuminator: Light source: 2.0 kW Super high pressure mercury lamp Slit: 1.6 mm Intensity: 450 mW Uniformity: ≤ ± 3 % Wafer alignment: Mode: Manual Accuracy: ≤ 0.6 µm (3σ) Scope: Light resource: LED Type Erector lens: 1x, 2x, 3x Scanning mechanism: Drive unit: Scanning the carriage by DC Motor Range, 4"-6" Speed: 5 to 150 sec (25 mm/sec - 0.83 mm/sec) 1988 vintage.
CANON MPA 600 FA is a full-auto mask aligner used to precisely align photomask features to die features on wafers. It is specifically designed for production of integrated circuits, MEMS, optical devices, and 3D devices such as high-density packaging and displays. CANON MPA600FA is based on an immersion optical equipment which allows for high-resolution imaging of patterns down to 25 nanometers. It utilizes high-precision alignment stages for wafer and mask positioning, assuring high-accuracy alignment accuracy. MPA-600FA also has an integrated auto-focus for both wafer and mask, minimizing the labor time required to set up the aligner. MPA 600FA has a built-in stepper to enable pattern overlay editing function and 3-D compensation process. This ensures high registration accuracy even with long exposure times, giving precision alignment of patterns down to 25 nanometers with industry standard 1:1 registration accuracy. It also provides a reliable px. fidelity map pattern detection function which can detect shifting between alignment accuracy shift and reference lattices for further compensation. MPA600-FA also offers an image correction device for pattern overlay wafer to wafer alignment as well as for mask to wafer alignment. MPA600FA has an LED image generation system that supports exposure times ranging from 4 to 40 microseconds. This makes it suitable for most processes from micro to nano-level device fabrication. CANON MPA600-FA also offers a full range of illumination and substrate treatments so that photomask patterns can be transferred to the desired substrates. This will enable long-term consistency in device patterns and accuracy. CANON MPA-600FA also features a wafer metrology feature which measures both wafer and mask features to ensure that the device is of the desired calibration. The unit includes a high-resolution imaging machine which is capable of reading 2-dimensional patterns on the mask with a light source. This technology allows mask patterns to be imaged accurately and yields fewer misalignments of the photomask pattern and device features. CANON MPA 600FA is a great choice for production of high-precision devices with accuracy in the nanometer range. This tool is designed for use in production settings with its advanced alignment stages, integrated auto-focus, pattern overlay editing, and image correction technology. It is reliable, accurate, and offers long-term consistency of device patterns and accuracy.
There are no reviews yet