Used AMAT / APPLIED MATERIALS Centura Ultima HDP CVD #9063643 for sale

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ID: 9063643
Wafer Size: 8"
Vintage: 2000
Etcher, 8" (2) Ultima chamber (1) Ultima plus chamber Technology :IMD      Wafer Size : 8"      Wafer Shape : SNNF (Semi Notch No Flat)      Software Version : B4.3.14      CHAMBER TYPE AND LOCATION      Ch A : Ultima HDP-CVD      Ch B : Ultima HDP-CVD      Ch C : Ultima + HDP-CVD      Ch E : Multislot Cool Down      Ch F : Orientor      CHAMBER A,B Ultima HDP-CVD :     Nozzle : Long/Long Side      Clean Gas Distribution : Baffle      Turbo Pump : Ebara ET1600WS w/ HVA      Wafer Temperature Monitoring : Yes      Top Gas Feed : Without Top O2      Dual Independent He Control : Standard 10/10 TORR      Clean Method : Microwave      CHAMBER C - Ultima + HDP-CVD :      Nozzle : Long/Long Side      Clean Gas Distribution : Baffle      Turbo Pump : Ebara ET1600WS w/ HVA      Wafer Temperature Monitoring : Yes      Top Gas Feed : Without Top O2      Dual Independent He Control : Standard 10/10 TORR      Clean Method : Top Mount      EXISTING ELECTRICAL REQUIREMENTS      Line Frequency : 60Hz      Line Voltage : 200/208V      Line Amperage : 600A Platform      EXISTING SAFETY EQUIPMENT :      EMO type : Turn to release EMO      EMO Guard Ring : Yes      System Labels : English w/Chinese Non-simplified      System Smoke Detector : Controller      EXISTING MAINFRAME :      Mainframe Type : Ultima HDP w/Multislot      Frame Type : Standard Frame      System Placement : Through the Wall      Mainframe Skins : No      Mainframe Exhaust Duct : No      Mainframe Facilities Connection : Back      Robot Type : HP Robot      Robot Blade : Ceramic      Loadlock Cassette : Narrow Body      Narrow body Loadlocks : Cassette Present Sensor      Loadlock Wafer Mapping : Basic      N2 Purge Type : STEC 4400MC 10 Ra Max      EXISTING GAS DELIVERY :      Gas Panel Surface Finish : Standard Gas Panel      MFC Type : STEC 4400MC 10 Ra Max      Valves : Fujikin 5 Ra Max      Filters : Pall Ni 10 Ra Max      Transducers : MKS w/ Display      Regulators : Veriflo      System Cabinet Exhaust : Top      Gas Panel Gas/Flow Direction Labels : Yes      APC Seriplex Cover : Yes      Gas Panel Doors : Solid      Gas Pallet Configuration :      Chamber A, B, C      Gas Stick/Process Gas/MFC size/Regulator/Transducer      #1 SiF4 100 Y Y      #2 O2 400 Y Y      #3 SiH4 200 Y Y      #4 Ar 300 Y Y      #5 SiH4 20 Y Y      #6 Ar 50 Y Y      #7 NF3 2000 Y Y      #8 Ar 2000 Y Y      REMOTES :      RF Generator Rack - Ultima Gen. Rack      ASTEX 80S09mW (3)      Quantity : Two      Ultima Stand-Alone RF Generator Rack : Yes      Generator Rack Cooling - RF Gen Rack Manifold with Quick Disconnect Ultima Gen Rack H20 Connection - Barbed Brass      Existing Heat Exchanger : SMC Thermo      Umbilicals :      System Controller Signal Cable Length : 55ft      RF Gen Rack Cable Length : 50ft      Ultima Stand-Alone Generator Rack : 98 ft      HX Hose Length : 50ft      HX Cable Length : 50ft      Pump Cable : 50ft      Ultima Microwave Generator Cable Length : 50 ft      Ultima WTM Cable Length : 32.8 ft (10m)      Vacuum Pumps, Exhaust Scrubber not included in sale Currently crated and stored      System Can be inspected 1999-2000 vintage.
AMAT / APPLIED MATERIALS Centura Ultima HDP CVD (High-Density Plasma Chemical Vapor Deposition) reactor is a modular, low-cost, vertical furnace designed for high-volume, high-throughput production of cutting-edge thin-film materials. The reactor features an innovative patented design that uses high densities of plasma over a large volume, enabling faster deposition rates and higher yield rates. The technology also offers low parasitics and improved uniformity of deposition, making it an excellent choice for use in applications such as solar cells, flat panel displays, optical coatings, and advanced semiconductor devices. AMAT Centura Ultima HDP CVD reactor uses RF-driven high-density plasma (HDP) to drive reactions at low temperatures, making it energy-efficient and ideal for producing high-performance thin-film coatings. The technology also eliminates many of the costly material handling and cleaning steps traditionally associated with CVD processes, minimizing costs and boosting overall yields. The equipment is highly configurable, allowing for a wide range of plasma sources and materials—including metal and dielectric targets, dielectric compounds, and gas targets—to be used in a selectable sequence. At the heart of APPLIED MATERIALS Centura Ultima HDP CVD reactor is the sub-module, or work-space, which is a fully enclosed chamber with a single plasma source and an integrated gas care system. This gas care unit ensures that the continuous flow of gases used in the deposition process is always at optimal levels for accurate results. A centrally-mounted target holder ensures that the substrate to be coated is rotated by the plasma without any obstruction for optimal uniformity in the deposition process. The high-density plasma, coupled with uniform deposition, ensures that the temperature of the substrate remains low and uniform, preserving the material's properties while ensuring a high-quality, precisely-patterned deposition across the surface. The machine's advanced control software provides an intuitive user interface, allowing for precise control over process parameters and allows for targeted optimization of the deposition process. Centura Ultima HDP CVD reactor is an excellent choice for any production line involving cutting-edge thin-film deposition. Thanks to its innovative and cost-effective design, high-throughput production is enabled at low cost and minimal overhead. This makes the tool an attractive choice for industrial manufacturers looking to realize the full potential of thin-film deposition and improved device performance.
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