Used OXFORD Plasmalab 100+ ICP 380 #293769565 for sale

OXFORD Plasmalab 100+ ICP 380 is an advanced etcher/asher equipment designed for precise plasma processing in semiconductor fabrication and research applications. This innovative tool offers a comprehensive range of capabilities, including reactive ion etching (RIE), inductively coupled plasma (ICP) etching, and plasma-enhanced chemical vapor deposition (PECVD), making it a versatile solution for a wide variety of etching and deposition processes. At the heart of OXFORD PLASMALAB 100 ICP 380 is its inductively coupled plasma source, which provides a highly efficient and uniform plasma discharge for superior process control and reproducibility. The ICP source generates a high-density plasma with low ion energy, allowing for precise and damage-free etching of delicate materials such as silicon, silicon dioxide, and III-V compounds. The system is equipped with a high-power RF generator capable of delivering up to 1,500 watts of RF power to the ICP source, enabling high-density plasma generation for fast and efficient etching processes. The RF power can be adjusted in real-time to optimize process performance and achieve the desired etch rate and selectivity. PLASMALAB 100-ICP 380 features a patented gas delivery unit that ensures accurate and uniform distribution of process gases in the plasma chamber. This advanced gas delivery machine minimizes gas wastage and enables precise control over the etching chemistry, resulting in high process repeatability and uniformity across the wafer. The tool also includes a versatile process chamber with multiple wafer handling options, including a single-wafer chuck and a multi-wafer carousel, allowing for high-throughput processing of substrates up to 200 mm in diameter. The chamber is equipped with a range of gas inlets and reactive gas lines, providing flexibility to customize process recipes for different materials and applications. In addition to its etching capabilities, Plasmalab 100+ ICP 380 can also be configured for plasma-enhanced deposition processes, such as PECVD and high-density plasma-enhanced atomic layer deposition (PEALD). These deposition processes can be used to deposit thin films of various materials, including silicon nitride, silicon oxide, and metal oxides, for device passivation, insulation, and barrier layer applications. Furthermore, the asset is equipped with advanced process monitoring and control features, including real-time endpoint detection, optical emission spectroscopy (OES), and mass flow controllers for precise gas flow control. These capabilities enable users to optimize process parameters, monitor process stability, and ensure reproducible results in each processing run. Overall, OXFORD PLASMALAB 100+ / ICP 380 is a cutting-edge etcher/asher model that offers unparalleled process flexibility, precision, and control for advanced semiconductor fabrication and research applications. Its high-performance plasma source, advanced gas delivery equipment, and versatile process chamber make it an ideal solution for a wide range of etching and deposition processes in the microelectronics and nanotechnology industries.