Used OXFORD Plasmalab 100 - ICP 380 #293831766 for sale

ID: 293831766
Vintage: 2011
Reactive Ion Etcher (RIE) Vacuum: Secondary vacuum: ATH 1600M ATP80 ATP 150 / Controller ACT 600TH APC Valve: Stepgate 64046-PE52, 8" Pumping speed: 1500 l/s / 1150 l/s, 80 l/s, 140 l/s Ultimate pressure: 4,5E-9 Torr (6,0E-9 mbar) 5,0E-9 mbar, 5E-10 mbar Base Pressure: 6,00E-5 Torr, 6,19E-5 Torr Pressure switch 1: D059 14 000 100 mTorr Pirani gauge: APG-L-NW16 10 to 1E-4 mbar APG-L-NW16 10 to 1E-4 mbar CM Gauge: MKS 628B-15991 25000 torr to 0,05 torr Penning gauge: ASM AIM-S-NW25 7,5 x 10E-9 to 7,5 x 10E-3 torr ASM AIM-S-NW25 7,5 x 10E-9 to 7,5 x 10E-3 torr ASM AIM-S-NW25 7,5 x 10E-9 to 7,5 x 10E-3 torr Gaz: O2: 2,2 bar 100 CF4: 100 SF6: 100 Ar: 2 bar 100 BCl3: 50 Cl2: 100 Power supply: 600W, 13,56MHz (ICP380, 5kW, 2MHz) Chamber: Wafer: 6" 25 slots ceramic and effector Table: Aluminum, 8" Material of walls: AI / Alumine Volume: 77,421 Chiller model: Julabo FB51 Temperature: 50°C Flow: 22 I/min Media: H5 (Glycol silicone) Process: O2 Upgraded with X20 PLC and PC4500 (8) Line gas pods Power distribution box Chiller FP51 2011 vintage.
OXFORD Plasmalab 100 - ICP 380 is a highly advanced etcher/asher equipment designed for precision plasma processing of a wide range of materials in research and development as well as production environments. This tool combines innovative technology, exceptional performance, and user-friendly operation to meet the demanding requirements of modern semiconductor, MEMS, optoelectronics, and nanotechnology industries. The system features inductively coupled plasma (ICP) technology, which is known for its high-density and high-temperature plasma generation capabilities. The ICP source in Plasmalab 100 - ICP 380 provides efficient ionization of process gases and enables exceptional process uniformity and control. The ICP 380 configuration specifically offers a maximum operating power of 800 watts, ensuring robust and reliable plasma generation for a wide range of process applications. The chamber of OXFORD Plasmalab 100 - ICP 380 is equipped with a set of advanced features to facilitate precise etching and ashing processes. The unit incorporates a high-performance turbomolecular pumping machine, which ensures rapid and efficient evacuation of process gases and byproducts, leading to enhanced process repeatability and reduced cycle times. Additionally, the chamber is equipped with a range of gas delivery systems, including mass flow controllers and gas mixing capabilities, allowing for precise control of process gas flows and compositions. One of the key strengths of Plasmalab 100 - ICP 380 is its versatility in handling a wide variety of substrate materials and sizes. The tool features an automatic wafer handling asset that accommodates substrates of up to 200 mm in diameter, making it suitable for processing standard wafer sizes commonly used in the semiconductor industry. Moreover, the chamber design and configuration can be easily adapted to accommodate various sample types, shapes, and sizes, providing flexibility for researchers and manufacturers working on diverse applications. The software interface of OXFORD Plasmalab 100 - ICP 380 is designed to be intuitive and user-friendly, allowing operators to easily program and control the etching/ashing processes. The model comes equipped with a comprehensive suite of process recipes and parameter settings that can be customized and optimized for specific material types and process requirements. Real-time monitoring and control of key process parameters, such as gas flows, chamber pressure, RF power, and temperature, enable precise process control and optimization for achieving desired etch/ash results. In summary, Plasmalab 100 - ICP 380 is a state-of-the-art etcher/asher equipment that offers superior performance, versatility, and control for a wide range of plasma processing applications. Its advanced ICP technology, precise process control capabilities, and user-friendly interface make it an ideal tool for research and development labs, universities, and production facilities looking to achieve high-quality and repeatable plasma processes on various materials.
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