Used TEGAL 901e #9228768 for sale

Manufacturer
TEGAL
Model
901e
ID: 9228768
Etcher No pump compressor Temperature controller.
TEGAL 901e is an etcher/asher designed for production-scale semiconductor fabrication. It is a effective and efficient solution for fabricating high-aspect ratio through-silicon vias (TSV's). This etcher/asher uses advanced etching techniques to produce very deep vias with high aspect ratios while maintaining excellent surface finish. TEGAL 901 E utilizes cryogenically cooled ambient etching to enable precise control of etch times and temperature. This allows etching to take place without any further post-process processing steps such as grinding or polishing. The throughput is also optimized by employing a selected electrical bias field to allow higher etch rates. This etcher/asher also reduces costs by allowing for variable application of wet-etching chemicals, as well as different gas mixtures, in order to increase etch selectivity and reduce cost. 901e also features a variable geometry design with passivated Silylethane Plasma Desorption Source (PDES) technology which eliminates the need for special etch gases allowing for precise control of etch profiles. This design also enables precise fine-tuning of etch rates for high aspect ratio etchings. It further permits wafer temperatures to be precisely set, enabling fine tuning of etch rates and reducing thermal stresses. 901 E also boasts an advanced hardware configuration including an automated stage system and hot plate processor. This allows for precise execution of etching processes. The system is also fully upgradable to accommodate advanced etch processes such as deep reactive ion etching (DRIE). Overall, TEGAL 901e is an advanced, efficient, and cost-effective etcher/asher designed for production-scale semiconductor fabrication. Its cryogenically cooled ambient etching and selected electrical bias field, together with its innovative design and advanced hardware, are key features that make this etcher/asher an ideal solution for fabricating high-aspect ratio through-silicon vias.
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