Used EATON NOVA / AXCELIS GSD 200 HE #293829786 for sale
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ID: 293829786
Wafer Size: 6"
Ion implant, 6"
(4) Cassettes
Standard specific layout
ELS Source
Source analyzer magnet, FEM
Y Scan and rotary drive
Beam energy configuration:
Beam energy: 0 ~ 1200 keV
Extraction mode: 0 ~ 90 keV
Linac mode: 90 ~ 1200 keV
Vacuum pump system:
Turbo pump: SEIKO SEIKI Pump STPA2203C2
Turbo pump (LINAC): Pump P039 STP603C
Cryo pump (beam line and chamber): CTI-On board-8, CTI-On board-10
Cryo pump (beam line and chamber): CTI-On board-8, CTI-On board-10
Cryo compressor: CTI-9600
Dry pump: QDP-80 (Three units)
Gas / Model / MFC Type
PH3 / MFC / SDS
BF3 / MFC / Standard
XENON / MFC / Standard
Ar / MFC / Standard.
EATON NOVA / AXCELIS GSD 200 HE Ion Implanter & Monitor is an advanced implanter equipment designed to meet the demanding needs of the semiconductor industry. It is capable of implanting a variety of ion species including boron, phosphorous, arsenic, and oxygen. The system can be used to implant into a variety of materials, including silicon wafers, as well as other compounds such as polysilicon. It offers high throughput capabilities due to its high dose rates and precise beam control systems. The unit features multiple state-of-the-art ion sensors that monitor the parameters in the ion beam and optimize the performance of the implanter. This ensures that the parameters remain within their acceptable range for the highest quality implantation. A variety of control systems help to ensure that the proper dosage is maintained for the desired results. The machine also offers both manually-controlled and automated instrument operations. AXCELIS GSD 200 HE is also equipped with a wide variety of safety features. These features help to ensure that the ion beam and process environment remain safe for the operator. It has a built-in fault monitoring tool that alerts the user when a potentially hazardous condition is detected. Additionally, the asset is equipped with an explosion-proof vacuum isolation chamber that helps to prevent any unintentional release of material from the process chamber. EATON NOVA GSD 200 HE is designed to reduce costs and improve efficiency in the semiconductor industry. Its innovative ion-monitor and control systems allow it to reach higher doses quickly and with a high degree of accuracy. Additionally, its high-speed cooling model ensures that the wafers are cooled rapidly and evenly after implantation, reducing device-downtime and allowing for higher wafer yields. The equipment is also designed to reduce waste and minimize contamination, leading to higher yields and more efficient operation. Overall, GSD 200 HE is an advanced ion implanter that combines the latest technologies with proven reliability, allowing it to offer superior implantation performance for the semiconductor industry. Its precision control systems, advanced safety features, and efficient operation make it the perfect choice for any semiconductor applications.
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