Used EATON NOVA / AXCELIS NV GSD 200E2 #9224295 for sale
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ID: 9224295
Wafer Size: 8"
High current ion implanter, 8"
180 keV
SMIF System: ASYST LPT2200 SMIF Interface capability
Hardware configuration (Subfab / Auxiliary units):
Cryo compressor
Disk chiller
Vacuum system:
Cryo compressor 1: CTI-8200 (P2)
Cryo compressor 2: CTI-9700 (P3)
Beam line cryo pump 1: OB 8 ( P2 )
Beam line cryo pump 2: OB 10 (P3 )
No process cryo P9
Source pump: STPA2203C ( P1 )
No AMU Turbo pump
Terminal rough pump: EBARA Pump 40x20 ( RP1 )
Endstation rough pump: EBARA Pump 40x20 ( RP2 )
Vacuum controller: HCIG
End station:
(4) Cassettes
Wafer notch alignment: Automatic notch alignment capability with buffer cassette
Dummy wafer: Integrated dummy wafer fill-in capability
Wafer handling system: In-air / In-vacuum high throughput wafer handling system
Particle filter system: Class 1, UPLA filtered wafer handling system
Implant angle capability:
Two axis variable implant angle (+/- 11 deg in two axes)
Quad implant capability
Process disk spindle: GSD Series belt drive process disk
With active cooling and external close loop chiller
Beam monitoring system:
In situ beam potential monitor
Real-time patented dose control
Real-time beam profiler (Single dimension)
Process disk: Silicon coated process disk (UHD Small radius fence)
Process disk cooling interlock
Gas box options:
Modular gas box
(4) String gas box options
High pressure string
(2) SDS String hydride (Arsine and phosphine)
SDS String flouride (Boron trifluoride)
(3) Pressure transducers on SDS string: PSIA
Mass flow controller:
1660 Kit
(3) 1662 Kits
Extraction PS: 0-90 kV
Extraction voltage monitor
Vaporiser
Ion source: Eterna ELS (Extended life source)
Source bushing:
Extended life bushing
Source liner for extended life bushing
N2 Purge: Bypass valve and nitrogen purge
Extraction electrode 34
Source injection kit
AMU System: Triple indexed mass analysis magnet and power supply
Post accel PS: 0 -90 kV
No post accel electrode
Terminal transfomer: Dry transformer
Bias aperture assy
Flag faraday
Charge control technology:
Secondary electron flood gun: PEF
Closed-loop cooling system selection:
Cooling system: Single loop affinity chiller
Control UPS
Main isolation transformer
Abatement system: EGS237 Novapure
Smoke detector
Exhaust flow switch
Water leakage sensor
Light tower
No real time particle detection system
Advanced automation package:
SUN SOLARIS Operator workstation: Hard drive, 21" monitor
SECS I and SECS II Protocols
GEM Interface and ethernet ports
CIM Linked
Missing parts:
Gauss probe / Controller
Arm servo motor assemble
Wafer handler / Gyro controller
Cryo controller interface
Cell controller part
Extraction electrode board
MFC Interface board
Source assembly
Post stack assembly.
EATON NOVA / AXCELIS NV GSD 200E2 is an ion implanter and monitor. This type of equipment is used to implant ions through a thin membrane into the substrate or the target material. Designed specifically for high-speed, high-temperature implanting, this device is ideal for semiconductor and other technology applications. AXCELIS NV GSD-200E2 employs a tetrode type of ion source, which accelerates ions at energies ranging from 2 to 200 KeV. This type of ion source has a very broad area of coverage, allowing for precise positioning of the ion beam. The device also has an adjustable primary accelerating voltage, which can be changed to suit the target material's needs. This feature ensures that the device delivers a consistent beam of ions, allowing for the most even implantation possible. Additionally, the ion source can be adjusted to deliver a range of ion beam energies, ensuring the optimum implantation depth for the target material. Monitoring of the ion implantation process is accomplished through a variety of different means. EATON NOVA NV-GSD 200E2 is equipped with a digital display, which allows for precise readings of the ion current, energy levels, and more. Furthermore, the device is equipped with an ion beam data recorder, allowing for accurate read out of all ion implantation parameters. Additionally, the device is capable of real-time analysis of the ion beam parameters, allowing operators to respond quickly to any changes in beam parameters. EATON NOVA NV-GSD 200E-2 is designed to provide safe and reliable operation in a wide range of implantation environments. The device is manufactured with a high-voltage isolation transformer, preventing hazardous electrical shock to the user. Furthermore, the device is designed to use a low-gas pressure environment, ensuring the safety of the implantation process. Additionally, this device is equipped with an error-proof readout system, allowing operators to quickly identify any errors in the implantation process. Overall, EATON NOVA / AXCELIS NV-GSD 200E-2 is an effective and reliable ion implantation device and monitor. With its adjustable ion source, a variety of monitor and analysis options, and a range of safety features, this device is an ideal choice for semiconductor and other technology applications.
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