Used EATON NOVA / AXCELIS NV GSD-HE #9163722 for sale
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ID: 9163722
Wafer Size: 8"
Vintage: 2000
High energy implanter, 8"
Wafer type: Notch
Vaccum system:
Cryo compressor: CTI 9600, CTI 8500
Beamline cryo pump 1: OB8 (P2)
Beamline cryo pump 2: OBIO (P3)
AMU Turbo pump: TMP1000 (P8)
Terminal rough pump: EBARA
LINAC Rough pump: EBARA
Endstation rough pump: EBARA
Vacuum controller: HCIG
IG3: Ion gauge
Endstation info:
(4) Cassettes
Dummy wafer: Integrated "Dummy wafer" Fill-In capability
Wafer handling system: In-Air / In-Vacuum high throughput
Particle filter system: Class 1, UPLA Filtered
Implant angle capability: Two axis variable implant angle (+/-11 deg in two axes) (Quad)
Process disk spindle: GSD series process disk (installed )
Beam monitoring system: Real-time patented Dose Control
Process Disk: Non silicon coated process disk
Process disk cooling interlock: Yes
Terminal info:
Gas box option: Modular gas box / Four string gas box options
Extraction PS: 90KV
Extraction voltage monitor: Yes
Ion source: ELS Type
Extraction electrode: (3) Axis extraction electrode (Sen type)
AMU system: Triple indexed mass analysis magnet and power supply
Injector faraday: Injector flag faraday
Dry transformer
LINAC and FEM:
(10) Power supplies: 3kW 13.56 MHz
(10) High energy resonator cavitites and electrodes
(5) Upgraded quadrupole lens assemblies and power supplies
Resolving faraday: Yes
Double indexed final energy magnet (FEM) and power supply: Yes
Charge control technology (SEF - Secondary electron flood): No
SVR: No
Closed-Loop cooling system selection:
Cooling system: Sen type
Disk chiller: Sen type
General Info:
Main isolation transformer: Yes
Smoke detector: Yes
Exhaust flow switch: Yes
Light tower: Yes
Currently de-installed
2000 vintage.
EATON NOVA / AXCELIS NV GSD-HE is an ion implanter and monitor as well as a fully-integrated equipment, designed to implant dopant ions into semiconductor substrates. This versatile system uses high-tech monitoring systems to ensure precision and accuracy, allowing for a wide range of implantation profiles. It is built to meet the most advanced technology requirements for state-of-the-art implantation projects, with the ability to provide consistently high-quality replacements. AXCELIS NV GSD HE operates in two modes, I=V and pulsed high-voltage. The optimal conditions for each application are determined by the low-noise preamp and the beam position monitor in EATON NOVA NV-GSD HE. These monitors employ a variety of feedback-controlled devices, including beam current monitors, high voltage power supplies, and an ion mass analyzer. This allows for complete control over implantation profiles, with excellent beam stability and beam control for most Wafer front end operations. The unit uses a variety of advanced programming options to accurately control the implantation. These programming features include: adjustable beam direction, current, voltage, bias, and energy selection—as well as incorporation of precision high-purity ion sources. The ion source is purchased separately. It also includes digital timing and programmable analog-to-digital conversion, allowing quick and easy calibration of processing protocols. EATON NOVA NV-GSD-HE machine is designed with safety in mind, with a comprehensive electronic health monitoring tool and emergency shut-off that keep personnel safe from radiation or other dangers. The asset also comes equipped with top-of-the-line charging and ion source stability, along with beam interference reduction technologies. The built-in diagnostics allows users to troubleshoot processing errors and identify problems quickly and easily. EATON NOVA / AXCELIS NV-GSD HE provides timely and accurate data, allowing users to determine implantation outcomes and make adjustments when needed. Its advanced programming capabilities guarantee high-quality implantation results, and its safety features ensure personnel safety. This model is the perfect choice for any implantation task, with its combination of high performance and reliability.
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