Used EATON NOVA / AXCELIS Paradigm XE #9290830 for sale

EATON NOVA / AXCELIS Paradigm XE is an ion implanter and monitor developed for use in semiconductor fabrication. It is a high-performance, low-cost equipment that combines low-energy and medium-energy ion beams with high-resolution ion beam monitoring capabilities. The system is designed to perform a variety of functions in the process of ion implantation, including ion beam uniformity measurements, beam monitoring, device current measurement, temperature control, and measuring implantation depth. AXCELIS Paradigm XE ion implanter features an advanced beam control unit, which enables precise particle placement and accurate control of implantation parameters. The machine has a maximum beam current of over 1000 A/cm2, with adjustable scan lengths for uniform implantation over large areas. This makes the tool suitable for a range of applications, including ultra-shallow junctions and bulk implantation. The engine of EATON NOVA Paradigm XE consists of an ion source, an electrostatic accelerator, an ionizer, beam filters, and a beam-monitoring asset. The ion source produces ions of a wide range of energies, including, for example, arsenic and phosphorus at energies up to 500 KeV. Ions are guided through the electrostatic accelerator, where they are accelerated and subsequently emitted from the ionizer in a beam with precise size and shape. The beam-monitoring model allows for optimization of implantation parameters in order to achieve uniform implantation depths. The equipment is equipped with an advanced Digital Monitor System (DMS), which provides real-time, concurrent monitoring of all implanted wafers, as well as real-time analysis of the implantation data. The DMS provides accurate overlays, allowing for the comparison of different implantation steps or batches of wafers. The unit also provides enhanced set-up configurability, which allows users to set up the machine with custom beam scans or even multiple beams. Paradigm XE is an ideal tool for implantation of all types of semiconductor devices. The tool provides high-resolution, low-energy, and medium-energy ion beams with enhanced beam control capabilities. The asset is capable of performing a variety of functions in the process of ion implantation, including ion beam uniformity measurement, beam monitoring, device current measurement, temperature control, and measuring implantation depth. Its Digital Monitor Model provides real-time, concurrent monitoring of all implanted wafers and thorough analysis of the implantation data.