Molecular Beam Epitaxy

MBE Growth system R&D Epitaxial layers on substrates diameter, 3" GEN10™ growth chamber, 3" High-efficiency solar cells High-temperature superconductors Includes: GaGs Nitrides Oxides Direct scalability: GEN20™ GEN200® GEN2000® Capabilities: Extreme high temperature heater (>1850°C) Multiple E-beam source deposition Wafer holder exchange and/or flip Retractable sources System integration: Isolated preparation chamber Multi-system with dissimilar materials VEECO Legacy systems (GENII/GEN930) Atomic layer deposition Metrology (STM, Auger, ARPES, etc.) Platforms: GaAs Nitrides Oxides II/VI.

Molecular beam epitaxy system, 3" Type: Cell in: 60cc Dual filament ga cell: 125cc Cell cable 2-pol, TC (2) Cryo motor cables (4) Water pipes Pistols: N2 Cracker (With motor) (2) Trolleys, WH (5x 3'' 2x 2'') (2) End piece manipulators Buffer chamber extension Materials used: As, Ga, In, Al, Si, Be Connector vacuums: LN2 Cables joint Shutters tangen Cage distance pieces Power cable Doping cell (Si) Ga cell sumo Pyrometer Control unit Power cable Doping cell (Neu) Si-cell heat filament defect Head mass spectrometers: Lead through defective Al-cell thermo couple defective (2) Windows (Heated) Control-PC Cage Ratchet Dual filament cell 400g Sumo cell Dual filament cell (EPI 91-602) Dopant cell (EPI 95-2284) Mass spectrometer Control-PC Cage distance pieces (4) He-tubes Power cable LN2 Phase separator.

MBE System (3) Wafers: 2" Single: 4" Single: 3" Single: 2" / 3 x 2" 1999-2002 vintage.

MBE System.

MBE Growth system Applications: Grow lasers Sources: 2"e. Wagon wheel prep chamber with Auger analysis Auxiliary chamber Growth chamber Manual valve Ion-pumped 4-effusion cell system (8) 2" Effusion cells (4) Upward-looking effusion cells All GaAs: InALGaAs based materials with Si and Be dopant sources (3) Ion pumps at the base (2) Sorption pumps Functional RHHed and QMS Spare parts and effusion cells available No phosphorous deposited 6-wafer load lock O2 Plasma source H2S Cracker cell H2S3 Cracker cell Eurotherm temperature controller System operation software and computer 1984 vintage.

MBE Growth system Chamber with (8) source flange size 4.5” each Sources: Al, Ga, In, Be, Si, GaTe, As, Sb (2) Ion pumps: Main chamber (600 l/m) Preparation chamber (400 l/m) with (2) power supplies CTI8 Cryo pump for main chamber 6” Turbo pump with dry pump for load lock (2) Ti-Sublimation pumps With power supplies in the base of the main chamber 2" or 3" Sample manipulator with servo motors for rotation Position setting Control unit Beam flux monitor Controller Sample manipulator heater with power supply Temperature controller and display (3) Ion gauges: With (3) power supplies and controllers Main chamber Preparation chamber Load lock Load lock for 4-10 wafers With (1) heater for pre bake out at 150 C With its power supply Temperature controller Preparation chamber With (1) heater for bake out at 400 C With its power supply Temperature controller Electrical distribution panel Bake out panels with electrical connections (8) Shutters with their control units Utility distribution box for water, air, N2 QMS and RHEED with power supplies Operating system and computer (latest version of Moly, or AMBER, or EPIMAX) 4-6 sample holders All gaskets will be silver coated copper gaskets Pyrometer RHEED Camera and analysis software Turn key project Effusion cell: 4.5” flange Dual or single heater up to 1350 C 85-155 CC PBN crucible Power supply Temperature controller.

System SS Chamber: O-ring sealed cover & has a 1 ½" viewport (2) sets of Curvac ports around the circumference Upper set of ports include four 2 ¾" and three 3-3/8" Curvac flanges Pumping system: (2) Ultek sorption roughing pumps including manifold & manual valving Veeco MI300 Mag Ion pump rated at 300 l/s complete w/ Model CU510 power supply Mounted on a compact table.

MBE System Chamber with (8) source flange size, 2.75” MBE Components: RHEED System Sample manipulator with flux monitor QMS Head Glove box Pumps: Cryo pump Lon pump Turbo pump (2) Ion pumps: Main chamber (600 l/m) Buffer chamber (150 l/m) with (2) power supplies (2) Ti-Sublimation pumps With power supplies in the base of the main chamber Manipulator, 2" With servo motors for rotation Position setting Control unit Heater power supply Thermo-couple controller Beam flux Monitor and controller (2) Ion gauges: With (2) power supplies and controllers Main chamber Load lock Load lock for 6 wafers With heater for pre bake out with its power supply Temperature controller Electrical distribution panel Bake out panels with electrical connections Eight shutters with their control units Utility distribution box for water, air, N2 QMS, Power supply & display unit Operating system and computer (6) Sample holders Baffles head for main chamber turbo pump Gaskets silver coated copper gaskets Mixing manifold With (2) leak valves and tubing for gas interceptor Sulfur automatic valved cracker with: (2) Temperature zones 100 CC Quartz crucible (2) Power supplies (2) Temperature controllers Servo motor and controller and cable Oxygen plasma source with: RF Power supply Matching unit Leak valve Water flow meter and filter High temperature effusion cell with: Temperature zone up to: 2000°C 10 CC Crucible Power supply & temperature controller Low temperature effusion cell with: (2) Temperature zones (Base and tip) 25 CC PBN Crucible (2) Power supplies (2) Temperature controllers Gas injector with: Single heater Power supply Temperature controller and display Mixed manifold with two leak valves and tubing Options: QCM Integrated With machine for film thickness monitor RHEED System With 6" phosphorous screen and detector and camera E-beam gun with power supply and control unit.

Reactor, 5", 2" x 1 Solid source :Si, Al, Ga, In×2, Be×2 Gas source: AsH3, PH3 Chambers: entrance, transfer, growth PHEEd, PYRO, LN2 liquid separate Scrubber for gas.

Molecular beam epitaxy system.

MBE System.

MBE System Growth of GaAlAs (III-V compounds) Under vacuum Single wafer system, 2" Includes: Spare modules Vacuum pumps Spare parts REED / Auger attachments Manuals 1982 vintage.

MBE System.

MBE System MBE Switching unit Low vacuum gauges Low vacuum and loading chamber vacuum measuring unit Loading chamber Magnetic-discharge pump Technological chamber with (8) molecular sources With diffractometer screen Units for residual gases control Backside equipment with idle cryo-pump Molecular sources control unit (Left) Manual cover sheet 1982 vintage.

MBE System.

MBE System P/N: 981-4001.

MBE System, 3" Sources: Flange, 4.5" (8) Sources: (2) Ga (2) In Al Si Be Valved As cracker RHEED / QMS (2) Ion pumps Growth chamber: 400 Liters Prep chamber: 220 Liters Cryo pump for growth chamber Turbo pump and mechanical pump for load lock Bake out panels AMBER Power supplies Sample manipulator with control system, 3" Sample holders Clean chamber Crucible size: 30 to 60 cc CTI8 Cryo pump Turbo pump size: 140 Liter per second (5) Sample holders.

MBE System P/N: 981-4001.

MBE Growth system Combination of IV: Si / Ge / Sn Ports, 2.75" Chamber 1 (III-V): Arsenic valved cracker Indium effusion cell Gallium effusion cell Aluminum effusion cell Ga downward looking source Silicon effusion cell (5 cc) Beryllium effusion cell (5 cc) Chamber 2 (Group IV): Germanium effusion cell Silicon e-beam source Silicon high temperature source Tin effusion cell Arsenic valved cracker Boron dopant source.

MBE Growth system, 3" (10) ports for dopants Process: growth of arsenides and phosphides Can be used for nitride or oxide growth Liquid nitrogen lines and phase separator are available AlGaAs lasers Room temperature: 6 x 10-10 Vacuum: Growth chamber (GC): Triode ion pump: 400 l/sec Buffer chamber (BC): Triode ion pump: 200l/s (2) TSP Controllers Loadlock chamber (LC): CTI cryotor 100 cryopump (2) Vacshorption pumps Ventury pump In situ and calibration tools: RHEED system: 0-10 kev RHEED Oscillation growth rate calibration system Cells: EPI Valved cracker with valved controller Cables Riber three zone P valved cracker with valve controller Power supply (4) 400g Sumo cells Ga, In, Al (2) Dopont cells 19" Dual Electronic equipment rack: (12) solenson DC power suppliers Power supply Riber P valved cracker 2704 Dual channel Eurotherm controller Substrate and heated station (2) DC power supplies Substrate heater Heated station PC control system: Moly system with software Other tools: Ircon optical pyrometer GP dual ion gauge controller Growth chamber and beam flux (2) GP ion gauge controlers Buffer and loadlock chambers RHEED power supply RGA power supply unit TEK scope EPI Riber P valved cracker valve controller Riber P cracker power supply Pyrometer port heated viewport Substrate manipulator controller Loadlock chamber Lamp power and controller. HP chart record mounted RHEED Oscillation recording Trolleys for substrate handling.