Used RIBER 2300 #9377151 for sale

RIBER 2300 is a Molecular Beam Epitaxy (MBE) equipment designed for research and production applications. The system is equipped with an ultra-high-vacuum unit that is capable of sustaining low residual pressures of below 10-7 mbar. This is necessary to allow the reactive species to be brought into contact with efficiently and without reaction with the chamber walls. The machine includes a temperature-controlled pyramidal susceptor platform, allowing growth at temperatures up to 1100°C. The MBE tool also offers an efficient gas delivery asset with a wide variety of metal and organic precursors for growth. The active gases are fed into the chamber through thermal crackers for optimal beam control. 2300 features a wafer tracking model with collision detection to protect the processed materials from contamination. In order to accurately characterize the layers grown on the substrate, the equipment is equipped with an in-situ X-Ray Photoelectron Spectroscopy (XPS) system. This is instrumental in identifying the growth conditions and composition of the layers formed during MBE growth. In addition, RIBER 2300 is outfitted with a GUI-controlled, motorized sample shuttling unit, allowing for efficient sample loading and transport in and out of the machine. This also supports the growth of multiple and layered structures on a single substrate. 2300 also includes process monitoring and control software features that provide automated support for a variety of growth and characterization procedures, including MBE growth and XPS analysis. This tool provides for real-time monitoring and control of the various variables that influence the quality of the layers grown. Overall, RIBER 2300 Molecular Beam Epitaxy asset is an advanced, fully-equipped model for the growth and characterization of thin film, layered structures for a range of research and production applications. With its ability to monitor and control the growth parameters and its in-situ XPS equipment for characterization, this system is well-suited for investigations into a variety of electronic structures.