Used RIBER 32P #9309553 for sale

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Manufacturer
RIBER
Model
32P
ID: 9309553
Molecular Beam Epitaxy (MBE) system Source: In, Ga, Al, As Phase separator.
Molecular beam epitaxy (MBE) is a method for synthesising and depositing thin films on a substrate. RIBER 32P equipment is a high-performance MBE system designed to deliver epitaxial layers (films) with precise thickness, excellent crystallinity, and low defects. The unit is composed of several components including a high-vacuum chamber, an effusion cell, a turbomolecular pump, a shutter, shutters of the source materials, and an ultrahigh vacuum (UHV) transfer chamber. The high-vacuum chamber serves as the area for the substrate holder, while the effusion cell is used to evaporate the source materials. The source material is then transported and deposited onto the substrate by the turbomolecular pump. Once the deposition is complete, the shutter can be used to isolate the substrate from the chamber. The other shutters can be used to release additional source material into the high-vacuum chamber. The UHV transfer chamber also provides an isolation environment to reliably transport substrates into and out of the high-vacuum environment and can be securely sealed to protect the growing epitaxial layer with a gas environment with a partial pressure of 10-9 mbar. The machine also includes additional components such as a liquid nitrogen cooled on-axis reflection high-energy electron diffraction (RHEED) tool, an automated interlock safety asset, optical spectroscopy capabilities, heating and cooling elements to accurately manipulate temperatures, a dynamic pressure control program, a computer control and data acquisition model, and a manual control equipment. The RHEED system consists of an electron gun and a detector to monitor the crystallinity of the substrate and the growing epitaxial layer in real time. The optical spectroscopy capabilities enable users to investigate various properties of the epitaxial layer such as absorption and reflectivity. The heating and cooling elements can accurately manipulate temperatures from -40°C to +900°C. The dynamic pressure control unit is used to keep the pressure in the high-vacuum chamber stable. The computer control and data acquisition machine provides real-time tool monitoring and control. Finally, the manual control asset provides the users with greater control over the model's parameters. In conclusion, 32P molecular beam epitaxy (MBE) equipment is an advanced, multi-functional system that provides precision thin-film growth of epitaxial layers with excellent crystallinity, low defect content, and precision thickness. Its additional components provide users with increased control and monitoring capabilities, making it a versatile unit for synthesising and depositing epitaxial layers.
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