Used RIBER 49 #9193092 for sale
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ID: 9193092
Wafer Size: 10"
Vintage: 2001
MBE System, 10"
(10) Ports
Recovery module: Hg
Temperature range: 0-700°C
No cracker
Main chamber:
(2) CT-10 Cryopumps
With LN2 baffles
Large ion pump
Wafer manipulator
RHEED:
Gun
Screen
Transfer / Loadlocks:
Transfer chamber with outgas stage
(2) Loadlocks with cryopumps
Sources:
(3) Installed
(2) Additional (CdTe, Te, In, and Hg)
2001 vintage.
Molecular beam epitaxy (MBE) is a type of vacuum deposition process that is used to create thin films with precise layers of materials. RIBER 49 is an MBE equipment that is used for depositing semiconductor elements, alloys, and compounds, such as gallium arsenide, indium phosphide, and gallium nitride, for use in optoelectronic components. 49 uses a closed-cavity source that houses two electron-beam evaporators and outlets for three different effusion cells. The two electron-beam sources are used for depositing metals and other materials with a high vapor pressure, and each of the three effusion cells is used for the deposition of individual constituents. The system also includes an ion source, a quartz crystal crystal thickness monitor, a sample heating stage, and a residual gas monitor. In addition, RIBER 49 can also be connected to a spectrometer to determine the composition of the material being deposited. 49 uses a magnetically-assisted beam unit to direct the materials towards the substrate surface. The magnets are used to reduce the spread of the beam, allowing the user to control the composition and thickness of the deposited film. The material is heated to evaporate it, and the substrate is heated to reduce the number of defects in the deposited film. Once the material is deposited onto the substrate, the thickness of the layers is controlled by the quartz crystal thickness monitor. This instrument uses a quartz crystal to monitor the oscillations of the substrate underneath the beam and regulates the amount of material that is deposited onto the substrate. The substrate can also be manipulated using the sample heating stage, which allows the substrate to be tilted, moved, and tilted again in the chamber for precise deposition of the material. Once the materials are properly deposited, the residual gas monitor can be used to check the level of contamination from foreign particles in the deposition chamber. This ensures that only the desired layers are deposited and that any imperfections are removed from the final product. RIBER 49 is an advanced and precise MBE machine that is mainly used for making semiconductor components as well as optoelectronic devices with precise layers. It can be used to deposit metallic and non-metallic materials with ease, and the ability to quantify material composition and layer thickness makes it an ideal choice for producing high-quality optoelectronic parts.
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