Used RIBER 49 #9383825 for sale
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ID: 9383825
Molecular Beam Epitaxy (MBE) System
Growth chamber
Cryopanel
Platen manipulator
Motorized beam flux gauge
Inspection viewports and shutters
Bakeout assembly
Transfer gate valve
CT 10 Secondary pumping system
PF6 TITANIMUM Sublimation pumping system
Cold finger
Isolation gate valve
Secondary vacuum measurement system
Primary vacuum measurement system
Roughing system
Buffer chamber (Shuttle/Outgassing) equipment
Outgassing station: 400°C
Loading chamber equipment
Unloading chamber equipment
Residual gas analyzer, 1-200 amu
RHEED System, 12 KeV
Screen and shutter
Controller:
System control and network package
PC
FCA Parts
Sources:
(2) ABI 1000 Gallium effusion cells
ABI 1000 Indium effusion cell
(2) ABN 700 DF Aluminum effusion cells
VAC 6000 Arsenic valved cracker cell
(2) ABN 160 D Silicon dopant cells
ABN 160 D Beryllium dopant celll
KPC 1200 Phosphorus valved cracker cell
Phosphorus recovery assembly
(10) Source shutter assemblies
(6) CF200/CF150 Dismountable source cooling panels
CF200/CF150 Indium dismountable source cooling panel
(3) CF150/CF100 Dismountable source cooling panels
Accessories:
Pyrometer pneumatic
(5) Molybdenum platens, 3x4"
(5) Molybdenum platens, 5x3"
Molybdenum platen, 5x3" Plus, 2"
(5) Molybdenum platens, 6"
Ion pumping system
Cryopanel lifting beam
Adjustment tools for cell shutters
Modline 7 V Pyrometer
Non-contact Infrared thermometer
Gaskets
(2) Crucibles with spare kit for ABI 1000 cell (Ga)
(2) Inserts with spare kit for ABI 1000 cell (Ga)
Crucible for ABN 700 DF (Al).
Molecular beam epitaxy (MBE) is an advanced thin film growth technique in which chemical vapor deposition (CVD) or physical vapor deposition (PVD) is used to create thin films on a wafer surface. RIBER 49 is a state-of-the-art automated MBE machine designed for cost-effective growth of ultra-thin films. 49 employs the Reflective Interference Enhanced (RIE) technology, which minimizes the deposition rate inhomogeneity while keeping substrate temperature stable. RIBER 49 offers multi-source capability and includes two effusion cells, a radio frequency (RF) plasma source, and a mass-analyzed ion-beam source. By using the multi-source capability of 49, a wide range of compounds can be grown. RIBER 49 also features substrate heating up to 500°C and an integrated vacuum system for the growth process. 49's shielding ensures optimum environmental and electrical safety, with a vacuum chamber designed to eliminate air pollution and to keep sample contamination below acceptable levels. RIBER 49 also includes an advanced real-time process monitoring system that provides real-time feedback and enables flexible adjustment of the deposition parameters. 49 is equipped with a touch-screen interface that allows remote access and data analysis for monitoring the growth process. RIBER 49 offers excellent crystal growth at low substrate temperatures, providing the possibility of growing a wide range of crystal structures. The multi-source capabilities and low operation temperature allow for the deposition of wide range of materials such as oxides, nitrides, and metals to form heterostructures with controlled interfacial characteristics. 49 is a versatile MBE system that enables researchers to deposit thin films with optimal performance and high uniformity on a variety of substrates. The low substrate temperatures and multi-source compatibility allow for the growth of different crystal structures, allowing researchers to gain insight into the nature of nanostructures. RIBER 49 also provides the capability to monitor the process in real-time, allowing for rapid process optimization. Thus, 49 provides a powerful solution for researchers in pursuit of the latest advances in both materials and device research.
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