Used RIBER 49NT #9103304 for sale
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ID: 9103304
Vintage: 2000
MBE growth chamber, 4"
4" x 4" Multi-wafer
49NT Growth chamber: GaAs based MBE
(3) Cryopanels: main, manipulator, pumping well
Cell dividers
Contains residual arsenide deposition inside
Ports have been blanked off with CF blank flanges
(4) Valved arsenic sources: (3) VAS2000 + (1) VAC2000
Ion pump: Riber, 900 L/s (bake-out shroud)
Ion pump: Riber, 400 L/s
Turbo pumping system: Alcatel Drytel 100
Turbo pump: Alcatel 5030CP
2000 vintage.
RIBER 49NT is a molecular beam epitaxy (MBE) equipment designed for the research and development of semiconductor materials and devices. It is a molecular-level deposition system that deposits atoms one at a time onto a substrate surface to form thin layers of crystalline material. The unit is composed of deposition sources, an automated shuttering machine, and an RF plasma source. The tool has two modules containing two different types of effusion cells to deposit multiple products simultaneously. The main component is composed of four Knudsen cells (K-cells) for the sequential deposition of Ga and Al that serve as the building blocks for III-V group semiconductor materials. The second module contains two Knudsen cells (C-cells) where Te, Sb, and In are deposited for the formation of II-IV type alloys and alloys. An automated RF-shuttering asset is provided controlling shutters for the deposition of both III-V and II-IV materials in any desired sequence. A high-pressure RF-plasma source helps to reduce base pressure and improve crystal quality. An in-situ crystal growth monitoring model is built into the equipment. An AFM, which is mounted in the chamber, is used to monitor the in-rune growth of the crystal for quality control purposes. The system also allows control of the crystalline orientation (Eulerian) during crystal growth. Additionally, the package provides an exhaust unit for the thermal, optical, optical, and electrical characterization of the sample. The machine is designed to work in ultra-high vacuum with a base pressure of <5 x10-11 Torr. The temperature range of the tool is between RT and 1000˚C; an eff-chamber ultra-high vacuum heater helps to achieve temperatures up to 1000˚C. The asset is also equipped with a robotic arm used to transfer wafers between modules. 49NT is used in a variety of industries in which semiconductor materials and devices need to be developed and studied. It is an essential tool for research and development projects and is considered to be one of the most advanced MBE systems on the market.
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