Used VARIAN / VEECO GEN II #9243569 for sale
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ID: 9243569
MBE System
Reactor: Horizontal
Single RHEED gun
Wafer transfer: Manual
Load lock
Monitoring equipment:
Ion gauges
Molly control unit
Gases: GaAs, InGaAs, AlGaAs
Dopants: Si, Be
Vacuum:
LL Cryo pump
LL Ion gauge
LL Degas station
BC IGP
BC Ion gauge
BC Substrate heater
GC IGP
GC Ion gauge
Gate valve Cryo - GC
Gate valve GC - BC
Gate valve BC - LL
Gate valve LL - Cryo2
Transfer rods
Sources:
(7) Shutters (With shutter motor rack)
Beam flux monitor
Electronic rack:
Ion gauge controller GC/BF
Ion gauge controller BC/LL
Controls:
Desktop computer
Communication unit
Removed parts:
All cells crackers
RHEED
RGA
Al / Ga / In / Si / Be Effusion cell
Electronic control units
EUROTHERM Control / Power supply units
CAR
Manipulator.
VARIAN / VEECO GEN II is a Molecular Beam Epitaxy (MBE) equipment used to produce high-quality, single-layer or multi-layer crystal films of semiconductor materials on substrates. It uses an ultra-high vacuum (UHV) chamber and consists of components such as three effusion cells, an e-beam evaporator, a gas injection system, a substrate sputter gun, a beam-shaping unit, a quartz crystal monitor, and a load lock. The effusion cells are used to raise the substrate to the required growth temperature and keep it at a constant temperature during the growth procedure. The e-beam evaporator is used to evaporate the source material and transport it to the desired area on the substrate. The gas injection machine is used to inject gases into the chamber to affect the material's growth characteristics. The substrate sputter gun is used to clean the substrate prior to growth and is also used to deposit a thin layer of material on the substrate. The beam-shaping tool is used to control the profile of the beam. The quartz crystal monitor is used to measure the thickness of the crystal film being deposited. The load lock is used to transfer wafers into and out of the chamber while keeping the UHV intact. VEECO GEN II MBE asset is capable of producing high-quality, single-layer or multi-layer crystal films in a controlled environment and can maintain pressures as low as 5 x 10-10mbar. The model is also equipped with user-friendly software that allows for easy operation and precise control of the growth parameters such as substrate temperature, gas flow, and beam parameters. The software allows for the automation of growth programs to maximize the process efficiency and accuracy. Overall, VARIAN GEN II MBE systems is an excellent choice for producing high-quality, single-layer or multi-layer crystal films for use in various electronic and optoelectronic applications. Its advanced control mechanisms and precise growth parameters ensure precise and consistent results. With its user-friendly software and automated growth program capability, it is easy to use and efficient in creating the desired results.
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