Used VEECO Gen II #9194612 for sale

Name: VEECO Gen II
Brand: VEECO
SKU: 9194612
Availability: InStock

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Molecular Beam Epitaxy

Manufacturer

VEECO

Model

Gen II

ID: 9194612

Wafer Size: 3"

MBE Growth system, 3" AlGaAs Laser InGaAsP Vacuum: Growth chamber (GC) Triode ion pump: 400 l/sec Buffer chamber (BC) Triode ion pump: 200 l/sec (2) TSP Controllers Loadlock chamber (LC) (100) CTI Cryotor cryopumps (2) Vacshorption pumps Ventury pump In situ and calibration tools: RHEED System: 0-10 keV RHEED Oscillation growth rate calibration system Cells: EPI Valved cracker with valved controller Cable Riber three zone P Valved cracker with valve controller Power supply (3) 400g Sumo cells Ga, In, Al (2) Dopont cells Dual electronic equipment rack, 19" (12) Solenson DC power supplies 2704 Dual channel Eurotherm controller Substrate and heated station (2) DC Power supplies Substrate heater Heated station Other tools: Ircon optical pyrometer Growth chamber and beam flux (2) GP Ion gauge controllers Buffer and loadlock chamber RHEED Power supply RGA Power supply unit TEK Scope Riber P valved cracker valve controller Riber P cracker power supply Pyrometer port heated Substrate manipulator controller Loadlock chamber Lamp power and controller AGILENT / HP / HEWLETT-PACKARD / KEYSIGHT Chart record mounted RHEED Oscillation recording Trolley for substrate handling.

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VARIAN / VEECO GEN II molecular beam epitaxy (MBE) equipment is a ground-breaking technology used for research and development of high-quality semiconductor materials. It provides exceptional levels of control, precision and accuracy for the production of these devices to ensure optimal performance and reliability. The system includes VEECO GEN II MBE Processor for material doping, deposition, and growth of structures. The processor is designed to achieve ultra-high vacuum environments and operate a broad range of substrate and sources configurations. The unit also includes the optional AE VEECO Long Body Source, which provides high power and excellent homogeneity of the molecular beam, allowing accurate and precise MBE results. The following mainunit components are included: 1. Vacuum Chambers - The main chamber is designed to work under ultra-high vacuum environment, allowing deposition and growth of materials layers with excellent uniformity and atomization. 2. Substrate Sources - A number of sources are available, depending on the materials and standards required (cystalline/amorphous, etc). For improved accuracy, optional reference and destination sources can be used for optimized growth levels. 3. Source Configurations - The source configurations include ion source, electron-beam source, reactive source, and embedded source to accommodate variousMBE processes. 4. Process Control - Variable-rate process control allows precise adjustments to the substrate deposition or growth rate. An optional Autotune module is available for improved process control, as well as improved productivity and cost savings. 5. Sample Alignment - The sample alignment machine provides precise and repeatable positioning of the wafers and their layers for optimal uniformity and accuracy. 6. Vacuum Monitoring - The tool monitors levels of pressure, temperature, and residual gases using the in-situ hygrometric and deposition cells, analyzers and gauges. VARIAN GEN II MBE asset offers user-friendly design and intuitive controls for fast setup and operation. The model is also offered with various configurations, depending on specific requirements. By utilizing the latest MBE technology, the equipment is capable to deliver optimum precision and accuracy for superior quality and reliability.