Used VEECO GEN III #9378324 for sale
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ID: 9378324
Wafer Size: 2"-4"
Vintage: 1996
MBE System, 2"-4"
Pieces: ¼"
Electronics rack
Chamber
Computer
RHEED Camera type: SI NEK150R1
RGA Mass spectrometer: PRB ECU 9925
For III / V Growth: GaAs, AlGaAs, InGaAs, CBr4
(9) Sources (Rebuilt): (2) Ga, (2) Al, (2) In, As, Si, (shared) C / Be
H2 Cracker
1996 vintage.
VARIAN / VEECO GEN III is a molecular beam epitaxy (MBE) growth equipment that is typically used for the deposition of thin films at the atomic level. The system is comprised of several major components, such as a high temperature growth image furnace, an ultra-high vacuum chamber, multiple effusion cells, a thermal proximity shutter, and several foreline pumping systems. The image furnace, which is capable of reaching temperatures up to 1000 degrees Celsius, is used to convert material from solid to gaseous form in order to deposit high quality, ultra-thin films. The ultra-high vacuum chamber is the area in which the deposition occurs, and it is typically pressurized down to a few tenths of a millibar. The multiple effusion cells contain the source materials, which need to be heated to a high temperature in order for them to evaporate their elements and pass into the chamber to form the thin film. The thermal proximity shutter is used to control the relative position of the effusion cells to the substrate upon which the film is deposited. The foreline pumping systems are required to maintain a high level of vacuum, which is essential for MBE as it requires a low partial pressure environment in order to prevent contamination of the film. The pumping unit is attached to the vacuum chamber and serves two functions: to regulate the pressure of the machine and to generate a high quality vacuum. The pumping tool may also employ additional components, such as cryo traps, vacuum gauges, manifold valves, and lapped valves, to optimize performance. Overall, VEECO GEN III MBE asset is a powerful growth tool that can provide a range of material properties under extremely precise conditions. It offers an unparalleled level of control over the deposition process and makes it possible to create complex and intricate thin films.
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