Used DNS / DAINIPPON 80BW #182508 for sale

DNS / DAINIPPON 80BW
Manufacturer
DNS / DAINIPPON
Model
80BW
ID: 182508
Wafer Size: 8"
(1) Coat / (2) Develop system, 8" IFB.
DNS / DAINIPPON 80BW is a high-resolution positive photoresist equipment designed for 7.5K and 10K semiconductor fabrication processes. The system features a proprietary advanced polymer-containing positive resist, optimized to produce superior critical dimension (CD) control and low roughness surfaces. It is specifically engineered to ensure the highest performance for patterning at the most challenging resolutions. The unit is composed of three components: the resist material, the photoresist coating solution, and the developing solution. The resist material is a proprietary formulation of advanced polymers which provide superior resolution, line roughness, and sensitivity. The photoresist coating solution is designed to apply an even coating of the resist material. This photoresist coating solution is formulated to apply the physically thick resist in a uniform layer on the target substrate, allowing for the highest resolution possible during patterning. The developing solution is formulated to rapidly and completely remove the photoresist material from the desired area, while minimizing damage to the underlying substrate. The developing solution is optimized to provide superior pattern resolution, short cycle times, and minimal residue at the completion of the develop process. The machine performs best when used in combination with state-of-the-art optical exposure systems, accurate and repeatable tools, and cleanroom processes. Together, these components create complete photoresist systems with superior line edge roughness, accurate and repeatable dimensions, superior line resolution, and reduced development time. In conclusion, DNS 80BW is an advanced positive photoresist tool designed for the most challenging lithographic processes. The asset provides superior critical dimension control, low roughness substrate surfaces, and reduced development times. Furthermore, when used in combination with state-of-the-art optical exposure systems and cleanroom processes, the model is able to produce superior pattern resolution with minimal residue.
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