Used HEADWAY EC 102 #114663 for sale

HEADWAY EC 102
Manufacturer
HEADWAY
Model
EC 102
ID: 114663
photoresist dispenser Type 5 or 6 Fluid pump Vacuum tank not included.
HEADWAY EC 102 is a photoresist system designed for both single layer and back-to-back double layer patterning processes. It is a low-temperature curing negative type photoresist with excellent film formation performance on metal, dielectric and organic substrates. EC 102 is especially suitable for MEMS applications, where superior dry etching selectivity over the photoresist and metal is required. Its development includes an optically active functional group that crosslinks to form a polymer network when exposed to a UV light source. The reaction results in an increased resistance to high-energy ionic bombardment in high-resolution etch processes. This photoresist system provides excellent uniformity and dry etch selectivity over photo-definable organic layers. Its organic-inorganic hybrid network is engineered for minimal edge-beading, has minimized effect from the backside etch and its surface adhesion is excellent. When exposed to high laser irradiance, the product behaves near-perfectly across very low line-width variations in single-level layer patterns, allowing high resolution etching outcomes. Its low residue performance minimizes the need to use highly aggressive cleansers and makes it suitable for use in thin layers of sensitive dielectrics. HEADWAY EC 102 can be developed with a wide range of positive and negative developers. From phenolic core-shell nano-particles to low temperature polymerization, it provides excellent processability and can be used in multiple patterning applications. The product also features excellent coating uniformity, consistency and surface planarization. EC 102 is well-suited for applications like optical transceivers, liquid crystal displays and microfluidic chips that require very accurate patterning and surface planarization. Overall, HEADWAY EC 102 photoresist system is a highly versatile and cost effective process for creating large feature sizes, thin layers and highly accurate structures for a wide range of MEMS applications. It is designed to be compatible with ultrathin layers of dielectric and organic substrates, to work in combination with a variety of positive and negative developers, and to feature excellent dry etch selectivity and uniformity.
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