Used TEL / TOKYO ELECTRON ACT 12 #9216584 for sale

TEL / TOKYO ELECTRON ACT 12 is a high-performance photoresist equipment developed by TEL Ltd. It uses deep-UV light for lithography exposure, which is then processed by the system's optical aligning and assembly. This results in faster exposure times with higher resolution imaging and process uniformity, especially when used in combination with top-of-the-line exposure units. The photoresist unit utilizes multiple layers of photo resist material to form the desired pattern by selectively absorbing and ejecting light in the layer. In TEL ACT 12, a liquid-film-forming photoresist acts as the first layer of the multilevel resist stack. This film is then exposed to the light to photo-etch the molecular polymer chains within the photoresist. This exposure process preserves the desired pattern while simultaneously masking those elements in the film not exposed to light. Once exposed, the photoresist layer undergoes a chemical reaction with the secondary exposure material. The exposure material, usually an electron beam, acts as an etching agent to further refine the patterns in the photoresist layer. This process allows for finer resolution imaging, improved etching control, and a higher degree of control over the depth of the etch. Additionally, electron beams can accurately and quickly etch multiple layers of photoresists simultaneously. Finally, the development process of the photoresist layer is completed with a post-development rinse using a developer chemistry. This rinse removes any remaining unexposed regions of the photoresist layer. This post-development process effectively leaves only the desired pattern in the photoresist layer. In addition to its increased resolution, TOKYO ELECTRON ACT12's exposure and etching processes offer a wider exposure range and improved exposure accuracy. In conclusion, TEL ACT12 is a high-performance photoresist machine developed by TOKYO ELECTRON Ltd. It is capable of faster exposure times with higher resolution imaging and process uniformity. The tool utilizes a multilevel resist stack in combination with deep-UV light, electron beam exposure, and post-development developer chemistry to accurately and quickly fabricate and develop the desired pattern in the photoresist layer. Additionally, this photoresist asset offers a wider exposure range and improved exposure accuracy.