Used TEL / TOKYO ELECTRON Clean Track Lithius #9397044 for sale
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TEL / TOKYO ELECTRON Clean Track Lithius is a photoresist equipment that enables the void-free formation of trace layers with a narrow width and superior frequency characteristics by combining the company's proprietary TEL Clean Track Lithius technology and its Discrete Conductor formation processes. The system uses lightweight and low-vibration wire pullers to provide ultra-precision linear transport of the substrate stage. To begin with, prior to using TOKYO ELECTRON Clean Track Lithius, the substrate is coated with a photoresist layer, which is then exposed to ultraviolet (UV) light. This allows the photoresist layer to harden selectively, allowing patterns to be created as desired. Afterwards, the next step in the process involves development of the patterned photoresist layer, which exposes the underlying metal substrate. The developed photoresist layer acts as a protective mask, preventing etching of the metal where it's applied. After that, etching of the metal is performed using a plasma-based etching unit, wherein the surface of the metal is exposed to a combination of gases like chlorine and nitrogen. Plasma and etch gases enable efficient release of energetic ions which react with the reactive species of the metal, forming volatile ion clusters, which rapidly etch away the metal. The last process involves depositing a thin, conformal layer of insulating material over the surface of the etched metal layer. This insulating material is electrically tolerant and is used for electrical insulation in order to ensure superior electrical performance. It also prevents the development of susceptance and eliminates noise. The combination of patterning via photoresist, plasma etching and insulating deposition enables Clean Track Lithius to generate micron-scale trace layer patterns with exceptional electrical performance. This machine is now widely used in various electronics and photonics applications including miniaturization in communication systems and high-density interconnects.
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