Used ALLWIN21 AW 2001R #9201803 for sale

ALLWIN21 AW 2001R
ID: 9201803
Wafer Size: 2"-6"
Plasma etcher, 2"-6" Wafer loading: 3-Axis robot Plasma power: Microwave Type: Parallel / Single wafer process Stand alone Gas lines: (4) Lines Applications: BPSG Etcher LTO Etcher TEOS Etcher Thermal oxide etcher LPCVD Nitride etcher PECVD Nitride etcher Trench rounding Descum RIE Damage removal Sodium removal Planarization Backside etcher: Poly, nitride, oxide Nitride pattern removal: PBL, LOCOS With pad oxide: >400Å Low temp photoresist ashing over: Oxides, Poly, Al, W, Ti Main frame with breakers, relays and wires Pentium class PC Keyboard Mouse USS SW Backup and cables Fixed cassette stations: (2) Cassette stations One cassette station / One centering / Alignment station Door assembly Metal shower head Extended alumina plasma tube for better uniformity Orifice, gas cap Chamber body and top plate Main control, distributor PCB and DC H1-7 x 10.5 Integrated (3) Axis solid robot Water cooled MAGNETRON and wave guide Water cooled 1000W MAGNETRON / Wave guide with an AGL Microwave power generator: 2.45GHz (4) Isolated gas lines With pneumatic valves and MFC AC Box Main & slow vacuum valves MKS Baratron Throttle valve Front EMO Interlocks Touch screen GUI, 15" Options: GEM / SECS II Function Light tower Vacuum pump Chuck temperature: 60-110ºC (±2 ºC) Gases: NF3, CF4, HE, O2 Uniformity: 100 mm: ± 3% (5% 3 σ) 150 mm: ± 5% (8% 3 σ) Maximum - minimum / 2 x average Reproducibility (w-t-w): 10% 3 σ Particulate: 0.05p / cm2 > 0.3µm Vacuum chamber pump: 165 cfm Cabinet exhaust: >250 cfm Plumbed gases: CF4 O2 He NF3 Electrical requirements: 208 VAC, 3 Phase, 6 Hz, 30 Amps.
ALLWIN21 AW 2001R is a rapid thermal processor that uses its unique patented design to perform rapid thermal processing for a wide variety of applications. This processor is ideally suited for wafer level packaging as well as MEMS and compound semiconductor device manufacturing. AW 2001R features a unique double-sided parallel linear thermal zone in which users can monitor and control the temperature setting for each zone. This feature ensures uniform heating across the wafer surface. The patented control and monitoring equipment continuously controls and monitors the temperature and rate of each thermal zone independently, automatically controlling the thermal bath closest to the wafer to compensate for any uneven heating of the wafer. ALLWIN21 AW 2001R utilizes a powerful 5 kW five zone pulse laser heating system to ensure precision thermal control. The advanced power control unit is designed to quickly respond to changes in the process recipe or thermal conditions. The 2000R is available with a 3 kW metal halide lamp for annealing and diffusion applications. AW 2001R also offers a programmable gas flow machine that allows for precise control of the environment outside the thermal zone. The two individual controllable gas input ports can be used either for gas mixtures such as oxygen and nitrogen or for nitrogen/argon purging during cooldown operations. This provides flexibility to carry out different processes with the same equipment. ALLWIN21 AW 2001R is built with a robust construction and is equipped with a safety tool for proper operation. This asset helps to ensure safe and reliable operation of the equipment. With these features, AW 2001R provides users with a reliable and easy to operate thermal processing model for a wide variety of applications in the semiconductor industry.
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