Used ALLWIN21 AW 2001R #9201803 for sale
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ID: 9201803
Wafer Size: 2"-6"
Plasma etcher, 2"-6"
Wafer loading: 3-Axis robot
Plasma power: Microwave
Type: Parallel / Single wafer process
Stand alone
Gas lines: (4) Lines
Applications:
BPSG Etcher
LTO Etcher
TEOS Etcher
Thermal oxide etcher
LPCVD Nitride etcher
PECVD Nitride etcher
Trench rounding
Descum
RIE Damage removal
Sodium removal
Planarization
Backside etcher: Poly, nitride, oxide
Nitride pattern removal:
PBL, LOCOS With pad oxide: >400Å
Low temp photoresist ashing over: Oxides, Poly, Al, W, Ti
Main frame with breakers, relays and wires
Pentium class PC
Keyboard
Mouse
USS
SW Backup and cables
Fixed cassette stations:
(2) Cassette stations
One cassette station / One centering / Alignment station
Door assembly
Metal shower head
Extended alumina plasma tube for better uniformity
Orifice, gas cap
Chamber body and top plate
Main control, distributor PCB and DC
H1-7 x 10.5 Integrated (3) Axis solid robot
Water cooled MAGNETRON and wave guide
Water cooled 1000W MAGNETRON / Wave guide with an AGL
Microwave power generator: 2.45GHz
(4) Isolated gas lines
With pneumatic valves and MFC
AC Box
Main & slow vacuum valves
MKS Baratron
Throttle valve
Front EMO
Interlocks
Touch screen GUI, 15"
Options:
GEM / SECS II Function
Light tower
Vacuum pump
Chuck temperature: 60-110ºC (±2 ºC)
Gases: NF3, CF4, HE, O2
Uniformity:
100 mm: ± 3% (5% 3 σ)
150 mm: ± 5% (8% 3 σ)
Maximum - minimum / 2 x average
Reproducibility (w-t-w): 10% 3 σ
Particulate: 0.05p / cm2 > 0.3µm
Vacuum chamber pump: 165 cfm
Cabinet exhaust: >250 cfm
Plumbed gases:
CF4
O2
He
NF3
Electrical requirements: 208 VAC, 3 Phase, 6 Hz, 30 Amps.
ALLWIN21 AW 2001R is a rapid thermal processor that uses its unique patented design to perform rapid thermal processing for a wide variety of applications. This processor is ideally suited for wafer level packaging as well as MEMS and compound semiconductor device manufacturing. AW 2001R features a unique double-sided parallel linear thermal zone in which users can monitor and control the temperature setting for each zone. This feature ensures uniform heating across the wafer surface. The patented control and monitoring equipment continuously controls and monitors the temperature and rate of each thermal zone independently, automatically controlling the thermal bath closest to the wafer to compensate for any uneven heating of the wafer. ALLWIN21 AW 2001R utilizes a powerful 5 kW five zone pulse laser heating system to ensure precision thermal control. The advanced power control unit is designed to quickly respond to changes in the process recipe or thermal conditions. The 2000R is available with a 3 kW metal halide lamp for annealing and diffusion applications. AW 2001R also offers a programmable gas flow machine that allows for precise control of the environment outside the thermal zone. The two individual controllable gas input ports can be used either for gas mixtures such as oxygen and nitrogen or for nitrogen/argon purging during cooldown operations. This provides flexibility to carry out different processes with the same equipment. ALLWIN21 AW 2001R is built with a robust construction and is equipped with a safety tool for proper operation. This asset helps to ensure safe and reliable operation of the equipment. With these features, AW 2001R provides users with a reliable and easy to operate thermal processing model for a wide variety of applications in the semiconductor industry.
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