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236 RESULTS FOUND FOR: used Rapid Thermal Processors

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  • AG ASSOCIATES HEATPLUS 2146

    AG ASSOCIATES: HEATPLUS 2146

    Rapid thermal processor, 4”-6” Oxide and nitride film deposition Cassette to cassette handling Temperature range: 400°C to 1300°C Single chamber Parts system.
  • DNS / DAINIPPON: LA-3000F

    Lamp anneal system, 12".
  • MPT RTP-600XP

    MPT: RTP-600XP

    Rapid thermal processor, 2"-6" Applications: RTA, Annealing, Implant Activation, Oxidation & Reflow Thermal processing: Si, Ge, Si/Ge, GaAs, InP and Other semiconductor materials Temperature range rate: 250-1300°C Temperature ramp rate: 1-200°C/sec Quartz process chamber, Capable of handling inert and Reactive gases Dual color pyrometer with Auto-Calibration feature (2) MFC Controlled gas channels; Upgradeable to 6 channels Integrated Windows NT based pentium processor Software revision 3.10 208 V, 60 Hz, 3-Ph, 80 A 2004 vintage.
  • ULVAC: RTA-4050

    Rapid thermal annealing system, 2002 vintage.
  • STEAG / MATTSON / AST: SHS 2800E

    Rapid thermal processor, 2000 vintage.
  • STEAG / MATTSON / AST: 2900

    Rapid thermal processing (RTP) system, 8" Single chamber (2) Loaders (2) Unloaders.
  • STEAG / MATTSON / AST: SHS 2800

    Rapid thermal processor, 8", 1999 vintage.
  • AMAT / APPLIED MATERIALS: CENTURA AP SILVIA TSV

    HDP Chemical vapor deposition (CVD), 12" Polysilicon etch.
  • AG ASSOCIATES HEATPULSE 8108

    AG ASSOCIATES: HEATPULSE 8108

    Rapid thermal processor annealing systems, 5"-8" Includes: Process chamber: Two high-intensity tungsten halogen lamp arrays STD Bus for real-time operation Quartz isolation tube Robot / Robot controller Gas control electronics ULPA Filtration system Graphic user interface (GUI) computer system Electronics Mass-flow-controlled gas handling Cooling ULPA Filtration Mechanical assemblies Applications: Silicon dielectric growth Implant annealing Glass re-flow Silicide formation and annealing Nitridation of metals Contact alloying Oxygen donor annihilation Wafer handling: Automatic serial processing Standard cassettes Throughput: Process dependent Ramp-up rate: Programmable Range: 1 – 180°C Per second Steady-state duration: 1 – 600 Seconds per step Ramp-down rate: Programmable Temperature Radiation dependent Range: 1 – 180°C Per second Maximum: 150°C per second Steady-state temperature range: 400 – 1200°C ERP Temperature accuracy: +3°C to -7°C Calibrated against an instrumented thermocouple wafer (ITC) Temperature repeatability: + 3°C Temperature uniformity: + 5°C Includes: Manuals.
  • AG ASSOCIATES HEATPULSE 4100

    AG ASSOCIATES: HEATPULSE 4100

    Rapid thermal processor 1991 vintage.
  • AG ASSOCIATES HEATPULSE 210T-02F

    AG ASSOCIATES: HEATPULSE 210T-02F

    Rapid thermal processor RTA Control unit: 210-T02.
  • JIPELEC JETFIRST

    JIPELEC: JETFIRST

    Rapid thermal processor (RTP), 4" Specification: Ramp rate: 70C/sec Maximum allowable temp: 1100C Thermocouple and outer edge, 4" Gases: N2 O2 H2/N2 (10% forming gas) Chamber: Vacuum below 1 Torr.
  • BOC EDWARDS HELIOS-S

    BOC EDWARDS: HELIOS-S

    Gas abatement scrubber system 2002 vintage.
  • STEAG / MATTSON / AST HELIOS

    STEAG / MATTSON / AST: HELIOS

    Rapid thermal processor (RTP) system, 12" (2) Process chambers (3) FOUP Carrier ID reader: Hermos RF CID SECS / GEM MBC Soak anneal controller Low temperature option: Including low temperature MBC Fast cooling option: FAC / USJF Low concentration processing kit Over pressure control Gasses: N2, 20 SLM N2, 150 SCCM O2, 150 SCCM O2, 20 SLM O2, 2 SLM Ar, 150 SCCM Ar, 20 SLM O2, 200 SCCMO APF Faceplate 2005 vintage.
  • BOC EDWARDS TPU 4

    BOC EDWARDS: TPU 4

    Rapid thermal processing (RTP) system 2003 vintage.
  • TEL / TOKYO ELECTRON: ALPHA-8S-ZVN

    VF LPCVD AA Nitride system, 8".
  • STEAG / MATTSON / AST: 3000

    Rapid thermal processor (RTP) system Includes: Chamber & transformer 2001 vintage.
  • AG ASSOCIATES: HEATPULSE 8108

    Rapid thermal processor (RTP), 6" 1995 vintage.
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