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229 RESULTS FOUND FOR: used Rapid Thermal Processors

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  • AG ASSOCIATES HEATPLUS 2146

    AG ASSOCIATES: HEATPLUS 2146

    Rapid thermal processor, 4”-6” Oxide and nitride film deposition Cassette to cassette handling Temperature range: 400°C to 1300°C Single chamber Parts system.
  • DNS / DAINIPPON: LA-3000F

    Lamp anneal system, 12".
  • MPT RTP-600XP

    MPT: RTP-600XP

    Rapid thermal processor, 2"-6" Applications: RTA, Annealing, Implant Activation, Oxidation & Reflow Thermal processing: Si, Ge, Si/Ge, GaAs, InP and Other semiconductor materials Temperature range rate: 250-1300°C Temperature ramp rate: 1-200°C/sec Quartz process chamber, Capable of handling inert and Reactive gases Dual color pyrometer with Auto-Calibration feature (2) MFC Controlled gas channels; Upgradeable to 6 channels Integrated Windows NT based pentium processor Software revision 3.10 208 V, 60 Hz, 3-Ph, 80 A 2004 vintage.
  • ULVAC: RTA-4050

    Rapid thermal annealing system, 2002 vintage.
  • STEAG / MATTSON / AST HELIOS

    STEAG / MATTSON / AST: HELIOS

    RTP system,12", Currently shrink wrapped and warehoused Process Chambers:12" (3x FOUP) Carrier ID reader (Hermos RF CID) SECS/GEM MBC soak anneal controller Low temperature option including Low Temp MBC Fast cooling option (FAC and USJF) Low concentration processing kit Over pressure control Gasses N2 20 SLM N2 150 sccm O2 150 sccm O2 20 SLM O2 2 SLM Ar 150 sccm Ar 20 SLM O2 200 sccmo APF Faceplate 2005 vintage.
  • STEAG / MATTSON / AST: SHS 2800E

    Rapid thermal processor, 2000 vintage.
  • STEAG / MATTSON / AST: SHS 2800

    Rapid thermal processor, 8", 1999 vintage.
  • STEAG / MATTSON / AST: 2900

    Rapid thermal processing (RTP) system, 8" Single chamber (2) Loaders (2) Unloaders.
  • AMAT / APPLIED MATERIALS: CENTURA AP SILVIA TSV

    HDP Chemical vapor deposition (CVD), 12" Polysilicon etch.
  • AG ASSOCIATES HEATPULSE 8108

    AG ASSOCIATES: HEATPULSE 8108

    Rapid thermal processor annealing systems, 5"-8" Includes: Process chamber: Two high-intensity tungsten halogen lamp arrays STD Bus for real-time operation Quartz isolation tube Robot / Robot controller Gas control electronics ULPA Filtration system Graphic user interface (GUI) computer system Electronics Mass-flow-controlled gas handling Cooling ULPA Filtration Mechanical assemblies Applications: Silicon dielectric growth Implant annealing Glass re-flow Silicide formation and annealing Nitridation of metals Contact alloying Oxygen donor annihilation Wafer handling: Automatic serial processing Standard cassettes Throughput: Process dependent Ramp-up rate: Programmable Range: 1 – 180°C Per second Steady-state duration: 1 – 600 Seconds per step Ramp-down rate: Programmable Temperature Radiation dependent Range: 1 – 180°C Per second Maximum: 150°C per second Steady-state temperature range: 400 – 1200°C ERP Temperature accuracy: +3°C to -7°C Calibrated against an instrumented thermocouple wafer (ITC) Temperature repeatability: + 3°C Temperature uniformity: + 5°C Includes: Manuals.
  • AG ASSOCIATES HEATPULSE 4100

    AG ASSOCIATES: HEATPULSE 4100

    Rapid thermal processor 1991 vintage.
  • AG ASSOCIATES HEATPULSE 210T-02F

    AG ASSOCIATES: HEATPULSE 210T-02F

    Rapid thermal processor RTA Control unit: 210-T02.
  • BOC EDWARDS HELIOS-S

    BOC EDWARDS: HELIOS-S

    Gas abatement scrubber system 2002 vintage.
  • STEAG / MATTSON / AST HELIOS

    STEAG / MATTSON / AST: HELIOS

    Rapid thermal processor (RTP) system, 12" (2) Process chambers (3) FOUP Carrier ID reader: Hermos RF CID SECS / GEM MBC Soak anneal controller Low temperature option: Including low temperature MBC Fast cooling option: FAC / USJF Low concentration processing kit Over pressure control Gasses: N2, 20 SLM N2, 150 SCCM O2, 150 SCCM O2, 20 SLM O2, 2 SLM Ar, 150 SCCM Ar, 20 SLM O2, 200 SCCMO APF Faceplate 2005 vintage.
  • JIPELEC JETFIRST

    JIPELEC: JETFIRST

    Rapid thermal processor (RTP), 4" Specification: Ramp rate: 70C/sec Maximum allowable temp: 1100C Thermocouple and outer edge, 4" Gases: N2 O2 H2/N2 (10% forming gas) Chamber: Vacuum below 1 Torr.
  • STEAG / AST / MATTSON: HELIOS

    Stand alone RTP system.
  • TEL / TOKYO ELECTRON / WAFERMASTERS: SA0150LP

    Copper annealing oven system, 6" Currently warehoused.
  • AG ASSOCIATES 410

    AG ASSOCIATES: 410

    Rapid Thermal Annealer, up to 4" wafers Manual controls Digital display Custom quartz holders available 400°C to 1200°C Max heat / cooling rate at 150°C/second.
  • AG ASSOCIATES 2146,

    AG ASSOCIATES: 2146,

    RTP, 3"-6" No vacuum capability 6 gases (4 inert, 2 corrosive) Wall cooling Active nitrogen cooling Controller: 8088 based MPU, touch-screen operation Temperature probe: Thermocouple "K"-type Pyrometer Heating Rate: 5...220K/sec Steady state temperature range: 400 - 1220 °C Gas Source: 6 lines controlled by MFC's Manuals available 1987 vintage.
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