Used AGS MPS-150-RIE #9078689 for sale
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ID: 9078689
Advanced plasma system
For Reactive Ion and Plasma Etching (RIE / PE)
MPS-150 Base module:
Assy, console, MPS-150
Assy, chamber, MPS-150
Assy, power distribution, MP-TCU
Assy, interlocks, RIO
Assy, harness, RIO/RS232
Assy, facilities, CLP08
Assy, controller, APC2014-PPLC
Configuration options for RIE:
Assy, electrode, RIE-150
Assy, plasma source, RF120w
Assy, vacuum, ISO63, 1CG
Assy, pressure control, 1T
Assy, dry pump, 8cfm-plasma
Assy, gas deck, 5-Channel
Assy, heater jacket, wall
Mass flow controller options:
Assy, MFC, standard
Assy, MFC, toxic
Other options:
Upgrade, plasma source: RF300w
Upgrade, pump, dry: 70cfm-Plasma
Turbo package? 70lps-Plasma
Turbo package: 250lps-Plasma
Turbo package: 300lps-MagLev
Ion gauge KF
Temperature controller: 10-35C
Temperature controller: 10-60C
Electrical: 208 VAC, 30 Amp, 50/60 Hz, 4 Wire, 5 Pin IEC
Compressed air and nitrogen: 80-100 PSI, 1 CFM, 1/4” QC
Process gas: 15 PSI, UHP, 100 sccm, 1/4” male VCR
Exhaust: 50 CFM, <0.5 mmHg, KF40
Cooling water: 30-60 PSI, 1-2 GPM, 3/8” QC.
AGS MPS-150-RIE is a high-quality research and industrial electron cyclotron resonance (ECR) plasma etching equipment designed to meet the needs of today's research and industrial applications. This model is especially suited for thin-film etching and deposition processes which require high quality and accuracy such as semiconductor processing, MEMS, and PDTs. MPS-150-RIE has various features that make it suitable for modern research and industrial applications. The plasma is generated using a high-temperature ECR source, which is a very efficient and very precise tool for controlling processes under precise power conditions. Additionally, the ECR source can be operated in a variety of shutter modes, such as pulse and burst mode, enabling precise control of etch processes and precise control of deposition thicknesses. The ECR source also has the ability to supply the required ions to the surface for a variety of process parameters, allowing for an even distribution over the substrate surface. The flux control system utilizes 12 independent gas channels and is equipped with a highly-automated gas blender, which makes it easy to control the gas concentration in the process chamber. The unit is also equipped with temperature and pressure measurement systems to ensure optimum operating conditions. In addition to its high-precision ECR source, AGS MPS-150-RIE is also equipped with a wide variety of peripheral equipment to further enhance its capabilities. This peripheral equipment includes sophisticated process monitoring tools, advanced plasma characteristics measurement tools, and a range of vacuum handling equipment such as load locks and robotics. The machine is constructed with a very robust and reliable structural design and is capable of handling a wide range of process parameters. The plasma confinement tool ensures that the plasma is evenly distributed throughout the chamber to ensure uniform etching. The etching asset is also equipped with an automatic end-point detection model that enables the equipment to stop the process at a predetermined point, ensuring repeatable etching results. MPS-150-RIE is an ideal piece of equipment for research and industrial applications due to its high-precision ECR source, reliable and robust design, and wide range of peripheral equipment. This model offers the features and performance that allow users to generate uniform and repeatable processes with exceptional productivity and accuracy.
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