Used AIXTRON 200/4 RF-S #197865 for sale
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ID: 197865
Wafer Size: 2"
MOCVD / GaN System, 2" single-wafer
1 x 2-inch wafer configuration in horizontal-flow reactor cell
Reactor cell integrated with M.Braun inert-atmosphere glovebox
Inductive heating to 1200°C with Huttinger power supply
Luxtron pyrometer for process temperature control
Filmetrics white-light reflectometer for in situ monitoring, with dedicated PC
Leybold D65BCS main pump
Five MO lines, including one configured for dopant dilution
Space allowance for three additional MO lines
MOs used TMGa, TMIn, TMAl, Cp2Mg, ditertiarybutylsilane
Hydride lines for ammonia, dilute silane, plus one spare
Johnson Matthey Pd-diffusion cell for hydrogen purification
SAES heated getter column for nitrogen purification
Full PC and PLC control using Aixtron CACE v2.2 software
Includes Aixtron wet-column exhaust scrubber
Used for ca 550 growth runs only
Offered with manuals and spares
Gas cabinets and control panels can be included in purchase
Currently powered down in cleanroom
2000 vintage.
AIXTRON 200/4 RF-S is a reactor for surface processing applications using radio frequency (RF) sputtering and evaporation technology. The reactor is a four target plasma-enhanced deposition equipment with a plasma gas flow feature. It is designed to provide a homogeneous, repeatable, and efficient deposition process. The reactor consists of four sources, each composed of a cathode, anode, and RF generator. The cathodes are sputtering targets of various materials that are designed to provide a desirable surface deposition. The anode is placed in the center of the cathodes to focus the energy generated by the RF generator. The RF generator helps create plasma in the chamber for efficient sputtering of the material from the desired target surface. In operation, the RF generator creates an electric field near the target, which causes the plasma gas to ionize and accelerate toward the target surface. This creates a uniform plasma beam to sputter the target material. The sputtered material is then subjected to the controlled atmosphere within the chamber and undergoes a controlled reaction, producing a desired surface deposition. The system also offers independent control of the applied RF power density and gas flow rate, allowing for precise control of the deposition process. The unit is equipped with an automated temperature and pressure control feature that constantly maintains the desired temperature and pressure within the chamber for consistent, optimized deposition. AIXTRON 200/4 RF-S also features advanced diagnostics and automated safety protocols that provide predictive maintenance and error detection capabilities. With its advanced diagnostics, the machine can detect problems early, ensuring precise control of the deposition process and reducing downtime caused by equipment failure. Overall, AIXTRON 200/4 RF-S is a robust and reliable sputtering and evaporation tool for a wide range of surface processing applications. Its integrated gas flow feature, temperature/pressure control, and advanced diagnostics make it an ideal choice for processing various materials for optimized deposition properties.
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