Used AIXTRON 2400 G1 #9191892 for sale
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ID: 9191892
Vintage: 1991
MOCVD Reactor
AlGaAs System
Main chamber
LEYBOLD D65 Pump
15" x 2" and 8" x 3"
Configuration:
(2) Ga lines
(2) In
(2) Al
(1) Mg
(1) Zn
(1) Spare
(2) As
(1) Ph
(1) Si2H6
(1) HCl
Temperature range: Up to 850°C
Used for AlInGaP LEDs
Gases used: Arsine, Phosphine, DiSi2H6, HCL
Windows based operating system: Upgraded from OS9
Usage: ~4,000 Hours
Installed with N2 and H2 disconnected
Purged with N2 before shut down
(3) / (4) Lauda baths
1991 vintage.
AIXTRON 2400 G1 reactor from AIXTRON SE is a semiconductor deposition equipment designed for scalable production. It is an advanced, low-pressure CVD system that offers superior process control and flexibility. This reactor provides a wide range of capabilities including oxide, nitride, and polysilicon deposition, as well as thermal oxide and other silicon-based processes. Its level of automation and configuration capabilities make it an ideal choice for thin-film deposition. 2400 G1 is designed to offer uniform and repeatable process quality. It is a fully automated unit, connected to a variety of gas sources to enable complete process flexibility. The machine is also equipped with advanced diagnostics such as temperature profiling, gas flow measurement, and deposition profiling for maximum process control. The reactor has a modular design composed of six horizontal reaction chambers with three reactors in each chamber. The central walls of the reaction chambers are made of stainless steel while the outside walls are made of ceramic. All the reactors are connected to transport rails which allow them to move between consecutive chambers. This feature ensures uniform deposition rates throughout the tool. AIXTRON 2400 G1 has a maximum temperature range of 90°C to 1000°C and a process pressure of 5 mBarg. It is equipped with gas injectors placed in a variety of positions in order to facilitate optimal gas distribution. In addition, the reactor allows for the incorporation of multiple gases and includes gas boxes and exhaust lines specially designed for this purpose. With a broad range of features, 2400 G1 is a reliable and highly efficient asset that offers a high level of control and repeatability. The model is suitable for a wide range of thin-film deposition processes and is designed to meet the latest semiconductor production requirements.
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