Used AIXTRON 3000 #9121782 for sale
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ID: 9121782
Planetary reactor system
P/N: 31010224
(95) Hi volume reactors, 2"
MO-IR3000 Heating unit
MOE-3000 Growth cabinet
MO-V300 Low pressure system
MO-EO Control cabinet
MO-GO Gas blending cabinet
Process materials:
Trimethylaluminum: (ch3)3al
Trimethylgallium: (ch3)3ga
Trimethylindium: (ch3)3in
Dimethylzinc: (ch3)2zn
Phosphine: ph3
Arsine: ash3
MO-R3000 AIX MOCVD Reactor:
Integrated in stainless steel glovebox
Water cooled stainless steel
Aluminum reactor
Quartz plate
Gas distributor
Exhaust gas collector
Hydraulic lift for reactor lid
Double O-ring system
LEYBOLD d1.6 pump
Graphite susceptor:
Current configuration: (95) 2" Wafers
Supply: (4) 8" Wafers
Tools for handling transfer system unit
Mo-IR3000 AIX 3000 infrared heating unit:
(30) IR Stripe heaters
Power control unit (thyristor system)
Current distribution
Fused
Individual control
Electronic control system
Water cooling system
MOE-3000 Growth cabinet:
Glove box with automatic pressure control containing:
Planetary reactor AIX 3000
Inert gas purification system for glove box
Achievable gas purity 1 ppm H2O and O2
Filters regenerative
Control panel for glove box
Low pressure operating unit MO-V3000 AIX 3000
Transfer chamber for reactor parts
Wafer transfer chamber
N2 Blow off gun
Hydraulic system for reactor lid operation
MO-V3000 Low pressure system:
High capacity particulate filter
Pressure sensor
Throttle valve
Pressure control
(2) IF 100 Particle traps
Vacuum valves
Vacuum tweezers
N2 Purge of pump
Dual port MKS pressure readout
PIS Indication system
MO-EO Control cabinet:
Ventilated steel cabinet for electronic control units
Power supplies for reactor heater and electronics
Control panel for reactor temperature with EUROTHERM 818s pid
Control panel for reactor pressure regulation with MKS 652
Control panel for pneumatic valves in gas blending system
Control panel for reactor cooling
Control panel for double O-ring leak monitoring
Control panel for moisture sensor
Safety control:
Hard-wired
Pal programmable logic
Computer control console
Printer
Emergency power off button
Power distribution
Signal distribution
Mo-go gas blending cabinet:
Exhausted steel cabinet
Metalorganic
Hydride sources
Controlled temperature baths
Integrated N2H2 distribution manifold
Asec pressure regulators
Run and vent lines
Auxiliary lines for reactor
Gas foil rotation
Particle filters
Check valves in all gas supply lines
Pneumatic distribution panel
Signal distribution panel
Integrated pd-diffuser.
AIXTRON 3000 is a chemical vapor deposition (CVD) reactor dedicated to the production of ultra-high quality semiconductor materials, used in the production of advanced electronic devices. Its modular design and unique patented features make it ideal for use in both laboratory environments and in larger production operations. 3000 is comprised of a deposition chamber, containing a single source electron beam gun and two target electrodes. The energy source is a 650ºC isolated electron beam, which is optimized for production of quality material. Inside the vacuum-tight chamber, energetic electrons from the gun interact with the gaseous reactant material to create a deposition of material on the target substrate. The resulting response is highly uniform and repeatable, providing the basis for a controlled production process. AIXTRON 3000 is engineered to deliver an unmatched degree of control over the deposition environment, allowing parameters such as pressure, temperature and rate of deposition to be precisely monitored and adjusted at will. Additional features include a state-of-the-art automated gas supply system and advanced wafer handling robots for quick and efficient substrate transfers. AILTRON 3000 materials come in a variety of options, including group IV, III-V and II-VI compounds. These compounds are specially formulated to provide uniformity and repeatability of the deposition process, and to ensure the highest possible quality of device production. The reactor also has the capability to incorporate a range of substrates, including silicon oxide, aluminum oxide and nitride. AIXTRON 3000 has a wide range of applications in the production of advanced electronic devices. Notable uses include high-efficiency infrared detectors, optical data storage devices, advanced ultra-thin films, and transfer-less lithography. It has also been used for the successful fabrication of graphene-based materials, for applications in biotechnology and nanoelectronics.
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