Used AIXTRON AIX 200 #148651 for sale
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ID: 148651
Wafer Size: 2"
LP-MOCVD system, 2"
For sophisticated heterostructures such as:
GaAs, InP, GaInAS, GaInAsP laser and multi quantum well structures
Single chamber: 2 x 2"
High purity gas blending system: tubing and components electropolished
MFC and electronic pressure regulators response time: 1.5 second
Temperature control for MO sources: better than 0.05°C
Susceptor for (2) 2" wafers
Uniform substrate temperature: maximum deviation 0.4°C / cm (1°C / inch)
Heating and cooling times: 10 minutes
Low pressure option: rotary pump with Fomblin oil and chemical oil filter
Switching time: 0.1 second
Process control: step programmable, 0.1 second increments
Gas velocities in the growth area: maximum 5 m/s (200 inch / s)
Total flow rate: standard up to 20 lpm
Process times for high output: 8 runs per 8 hour day possible
32 bit computer with floppy and hard disks
Safety interlock system operating even at computer down times
Glovebox.
AIXTRON AIX 200 is a highly advanced and versatile reactor developed by AIXTRON SE, a German semiconductor deposition equipment manufacturer. It is a dual-zone, high-performance, automated Molecular Beam Epitaxy (MBE) equipment, specially designed to deposit compounds onto substrates to produce the highest quality semiconductor devices. AIX 200 can provide Open-Atmosphere MBE (OAMBE) or Ultra-High Vacuum (UHV) MBE. It supports a wide range of vacuum deposition processes, such as evaporation, sputtering, and chemical vapor deposition (CVD). AIXTRON AIX 200 also supports horizontal and vertical deposition modes, enabling a wide range of materials to be deposited, including III-V, II-VI, and a variety of other compounds. AIX 200 is outfitted with an AI XTEC gas control system, which offers superior gas control, vacuum control, and offers a greater range of gas delivery options, with a maximum gas flow rate of 300 sccm and an adjustable fine flow rate of 0.1 sccm or less. The AIXTEC provides precise control of pressure levels, in both UHV and OAMBE modes. In addition, AIXTRON AIX 200 has an efficient thermal management unit, which enables temperature settings to be manipulated with high precision and accuracy. This is done through AIX 200's advanced in-situ powder set point reservation and distribution unit, which ensures that all substrates and components stay consistent across a large area. AIXTRON AIX 200 is also equipped with an adjustable parameter unit, where parameters such as incoming gas pressure, gas RMS flow rate, deposition temperature, monitoring systems, and deposition time can all be adjusted. AIX 200 provides excellent precision and accuracy, since it is capable of producing repeatable deposition results over long periods of time, with the ability to adjust the deposition rate and thickness. Its wire-grid heating machine further increases the accuracy and precision of deposition. Additionally, AIXTRON AIX 200 has a kinematic mount, which ensures all tilt, azimuth, and rotation parameters are maintained for accurate and repeatable deposition results. Overall, AIX 200 makes a great choice for semiconductor fabrication, offering superior performance, repeatable results, and top-level gas control and deposition accuracy. Its efficient and reliable thermal management tool and its adjustable parameter unit makes AIXTRON AIX 200 a great option for fabricating high-quality and high-precision semiconductor components.
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