Used AIXTRON AIX 2400 G3 HT #9352601 for sale

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Manufacturer
AIXTRON
Model
AIX 2400 G3 HT
ID: 9352601
MOCVD System 2001 vintage.
AIXTRON AIX 2400 G3 HT is an advanced thermal chemical vapor deposition (CVD) reactor that has been designed specifically for the production of high-efficiency semiconductor devices. It is a highly advanced system capable of tightly-controlled and uniform deposition processes with superior film quality. AIXTRON AIX 2400 G3 / HT features a large process space which can simultaneously accommodate up to four 4" wafers. The chamber has been designed to facilitate uniformity across the deposited wafers with effective gas circulation and optimal thermal insulation. The output from AIX 2400 G3 HT is extremely uniform with a high degree of reproducibility across multiple wafers. AIX 2400 G3 / HT is equipped with a powerful Heaters Adaptive Control System (HACS) for precise temperature control throughout the chamber. This feature ensures the uniformity of deposition conditions as well as stable nitrogen/oxygen (N/O) selectivity across the wafer surface. It also ensures that temperatures remain minimal for a consistent deposition process. AIXTRON AIX 2400 G3 HT uses advanced process control techniques to monitor and regulate the entire process. This includes feedback capabilities which respond to changing parameters in real-time for accurate control. These techniques are combined with intelligent software algorithms and powerful verification tools for highly reliable and reproducible results. AIXTRON AIX 2400 G3 / HT features a multi-source heating option for superior flexibility. This allows for either a single source or a multi-source heater set-up to be chosen, depending on the desired output. This feature enhances the system's capability to produce films of consistent quality while also providing the user with the ability to customize the process to fit their specific needs. The thermal CVD process enabled by AIX 2400 G3 HT is extremely efficient and flexible, allowing for a wide range of materials to be deposited. This includes III-V semiconductor materials such as gallium arsenide (GaAs) and gallium nitride (GaN) as well as oxide materials such as gallium oxide (Ga2O3). This gives users the flexibility to tailor-make their device for their specific purpose. In summary, AIX 2400 G3 / HT is a highly advanced and reliable thermal CVD reactor that is designed for the efficient and high-quality deposition of a wide variety of materials. It features a powerful HACS for optimal temperature control, precise process control, and multi-source heating for superior flexibility. As a result, it produces high-quality, highly reproducible films with uniformity across multiple wafers.
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