Used AIXTRON AIX 2600 G3 HT #293596198 for sale

AIXTRON AIX 2600 G3 HT is a state-of-the-art, high-throughput Metal Organic Chemical Vapor Deposition (MOCVD) reactor. It is equipped with low pressure, high output generators creating high deposition rates for thick, complex and uniform thin film coatings with excellent step coverage. With the unique Inverted-L geometry, it puts the substrate into a direct line in the path for growth of semiconductor thin films. AIX 2600 G3 HT utilizes AIXTRON excellence in MOCVD which is the dominant thin film deposition technology used for large-scale production of Group III-V compound semiconductor materials and devices. This reactor provides high uniformity and repeatability of thin films through the increased placement of gas inlets and improved control of the deposition parameters all while ensuring a highly-homogenous and low-cost epitaxial growth. The general process starts when the Inverted-L reactor is loaded with a single or multi-wafer cassette. The semi-automatic loading/unloading systems ensure a clean and uninterrupted substrate changing process. A hydrogen working gas such as H2, N2 or Ar, if necessary, enables the substrate to be heated by the on-board frequency-controlled microwave system up to 1100°C, while allowing maximum homogeneity of the temperature field. The reactor is additionally equipped with a gas bubbler and gas distributor. The application of a Gas Source Molecular Beam Epitaxy (GSMBE) with an upward-looking quartz showerhead which releases the quick-filling atomic and molecular precursors is key to achieving uniformity and reproducibility of the final deposited layer deposition. The GSMBE creates an even film growth and excellent step coverage, while allowing the usage of appropriate precursors. Further, layers such as buffer layers, contact layers, active layers and passivation layers can be added to build the desired device architecture. As a final product, AIXTRON AIX 2600 G3 HT delivers fully integrated, high performance microelectronic devices made of dedicated epitaxial layers with metal contacts. This highly advanced reactor is the perfect tool to produce up to 200mm GaAs-based optoelectronic, high power and high frequency microwave devices. It allows for superior deposition speed and short process times meeting the production needs of the semiconductor industry.