Used AIXTRON AIX 2600 G4 HT #9160106 for sale

AIXTRON AIX 2600 G4 HT is a high-throughput, high-performance reactor for epitaxial growth of advanced semiconductor materials. It possesses a number of cutting edge features including a full heated source-chamber, a multi-channel EF astigmeter, a pECVD deposition system and a variety of planetary-mounted substrate holders. This combination plays key roles in enabling both high-efficiency and high-temperature process control. AIX 2600 G4 HT has a large source chamber made from a thick-walled, metal-oxide quartz tube which is heated with an array of independently controlled multiple-zone electric furnaces. An adjustable gas-flow system allows for precise control of reactant gases used in the epitaxial processes. The source chamber is capable of reaching a top temperature of up to 1200 °C. The reactor's electronic forwarding unit (EFU) is a multi-channel astigmatic laser interferometer. This device enables precise control of the source-chamber pressure and provides feedback on the status of the growth environment for real-time process monitoring and optimization. Moreover, AIXTRON AIX 2600 G4 HT is equipped with a planetary-mounted substrate holder. The setup includes a telescopic adapter for easy handling and flexibility in substrate-holding while also allowing for the simultaneous distribution of different reagents to multiple substrate positions. This multi-positional capability allows for greater process flexibility and uniformity. The epitaxial layers grown in the reactor can be further characterized and monitored by the pECVD, or plasma-enhanced chemical vapor deposition, systems. These systems provide real-time analysis of the composition and thickness of the layers directly from the growth chamber. This advanced deposition technique makes use of a high-frequency electric field to break apart small amounts of reactant gas molecules, useful for deposition of dielectric films as well as thin oxides. In conclusion, AIX 2600 G4 HT is a powerful reactor for epitaxial growth of advanced semiconductor materials. Its cutting-edge features such as the heated source-chamber, multi-channel astigmatism laser interferometer, the pECVD deposition system and the variety of planetary-mounted substrate holders make it ideal for high-efficiency and high-temperature process control.