Used AIXTRON AIX 2800 G4 HT #9064064 for sale
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ID: 9064064
Vintage: 2010
GaN MOCVD System
EpiTT
Second wave length: 405 nm
Source: TMGa-1, TMGa-2, TMAl-1, Cp2Mg-1, Cp2Mg-2, TMIn-1, TMIn-2, TEGa-1
Thermal baths:
(5) RM 6S
(2) RM 25S
2010 vintage.
AIXTRON AIX 2800 G4 HT is a high throughput (HT) reactor for a wide range of applications and materials. It is a high-performance, low-cost alternative to conventional semiconductor production systems. AIXTRON AIX 2800G4-HT utilizes AIXTRON industry-leading MOCVD and HDPCVD technologies to provide higher wafer throughput yields and scalability. The AIX 2800 G4 reactor is built with a dual chamber architecture. The upper chamber is a high temperature MOCVD area, while the lower chamber is a low temperature HDPCVD area. All of the reactor components are housed in an insulated environment and hermetically sealed to maintain the precise temperature and pressure levels necessary for effective deposition. AIX 2800G4 HT is designed to be easy to install, operate, and maintain. AIX 2800 G 4 HT features best-in-class safety precautions, including top-end exhaust, onboard diagnostic software, programmable parameters, and intelligent process monitoring. Additionally, AIXTRON AIX 2800 G 4 HT is capable of depositing a wide range of materials in both high-quality and large volumes. AIX 2800 G4 HT is capable of producing semiconductor grade materials with a growth rate up to 20 um/hr. AIX 2800G4-HT accommodates wafers up to 6" in size and provides 3D controllable ratios for precise deposition control. Additionally, AIXTRON AIX 2800G4 HT owners can customize their speed, temperature, and pressure settings to optimize the deposition process for their specific application needs. AIXTRON AIX 2800 G4 HT also features advanced plasma processing capabilities, including rapid cycling and reactive gas injection. AIXTRON MCVD and HDPCVD technologies are perfect for materials such as silicon, germanium, and silicon-germanium. Additionally, AIXTRON proprietary Pulsed-System technology reduces deposition times and allows AIXTRON AIX 2800G4-HT to achieve the desired process results in a shorter timeframe. In summary, AIX 2800G4 HT is a powerful and efficient dual-chamber high-temperature/low-temperature reactor capable of a variety of semiconductor deposition processes. AIX 2800 G 4 HT is capable of handling wafers up to 6" in size, processing materials from silicon to germanium, and providing the precise control necessary for semiconductor grade materials.
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