Used AIXTRON AIX 2800 G4 ICHT #9135752 for sale

Manufacturer
AIXTRON
Model
AIX 2800 G4 ICHT
ID: 9135752
Vintage: 2007
MOVCD Gan system 2007 vintage.
AIXTRON AIX 2800 G4 ICHT Reactor is a high-performance, reliable reactor for advanced epitaxy and growth applications. It is designed to offer advanced control, precision, and accuracy from the beginning of a process all the way to completion. With this model, AIXTRON has established itself as a leader in the field, due to its high yield and reliable production of top-quality materials. AIX 2800 G4 ICHT Reactor is a multi-zone equipment that provides precise temperature control and a wide range of process conditions with a high degree of repeatability. This model offers 193 processing chambers, allowing for larger cabinets and faster loading times. Additionally, it has an integrated process control and data acquisition system, allowing for the real-time monitoring of all process parameters. The unit also supports advanced wafer processing, metrology, and wafer load-unload functions. The versatile reactor design enables the use of metalorganic chemical vapor deposition (MOCVD) technology, offering excellent uniformity and step coverage across the entire substrate surface. This model also offers planarization technology, which allows for complex device architectures that can be produced without any additional processing. With the built-in turbulence plate, crystal growth is consistent and uniform - even across large wafers. AIXTRON AIX 2800 G4 ICHT Reactor is designed with a high-precision rotational drive and a carbolite process chamber, providing an inert, stable process environment. This model also features EQCU (epitaxial quartz crystal unit) that offers low-pressure process control, creating a cost-effective and reliable process environment. The reactor operates on a closed-loop stabilization machine, providing the highest level of process control and accuracy. Overall, AIX 2800 G4 ICHT Reactor is an advanced tool that offers unsurpassed performance and yield in epitaxial and growth applications. Offering 193 processing chambers and an integrated control and data acquisition asset, it offers precise temperature control, a wide range of process conditions, and uniform crystal growth. With its advanced rotational drive and carbolite process chamber, this model provides an inert, stable process environment for accurate and cost-effective growth.
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