Used AIXTRON AIX 2800 G5 HT #9222508 for sale
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ID: 9222508
Vintage: 2011
MOCVD System
GaN
Chember: 56x2"/ 8x6"
Temperature monitor: Photrix / EPI TT
Hydride lines: NH3-1 / NH3-2 / SiH4
MO Source:
TMGa-1, TMGa-2, TMAI-1, Cp2Mg-l, Cp2Mg- 2, TMIn-1, TMIn-2, TEG-1, TEG-2
Main body
RF Generator: 1210mm(L) x 800mm(W) x 2300mm(H)
Main pump: EBARA ESA80W-HDF
Pump: (2) Scroll pumps
Monitor: Photrix LWL Luxtron
Monitor: EpiTT x GS x 405nm
Wiring: 4 Wire + Ground
Power: 400/230VAC, 3-Ph
2011 vintage.
AIXTRON AIX 2800 G5 HT is a high-throughput, high-volume metalorganic vapor phase epitaxy (MOVPE) reactor. It is designed for the growth and nucleation of III-V compound semiconductor materials, such as gallium arsenide and indium gallium arsenide, which are used in the production of components for optoelectronic devices such as LEDs and solar cells. AIXTRON AIX 2800G5 HT is a unified equipment combining advanced reactor design, feature-rich hardware, and native control software, providing superior performance while requiring lower maintenance costs. It has an annular reactor chamber that facilitates uniform material growth with a uniform layer quality over large-area wafers. Five separate sources of precursors and dopants can be independently controlled to optimize growth parameters, while the built-in heaters, gas supply systems, and pressure regulators allow for precise adjustment of flow rates. The system also includes power supplies, an exhaust blower, and a cooling unit. AIX 2800 G5 HT offers an advanced heating machine, designed to establish a uniform temperature distribution inside the rotation chamber. It provides very accurate regulation of temperature with adjustable ramp rates, ensuring that even large wafers have perfectly homogeneous temperatures. Its process control ensures high-quality epitaxial layers for complicated multi-heterojunction epitaxial structures with narrow layer tolerances of less than 2 nanometers. AIX 2800G5 HT also provides a broad range of additional features that enhance the tool's performance. Its precision alignment asset facilitates wafer mounting on the quartz or graphite susceptor at precise angles, to yield top layer uniformity. The model also has advanced calibration software, allowing for accurate and repeatable positioning of the sample plate. To maintain cleanliness inside the equipment, its high-efficiency filtration system ensures that the precursors and dopants are clean before their introduction to the reactor. Also, a gas-dynamic shutter helps reduce contamination from leaked precursor gas or by-products. Overall, AIXTRON AIX 2800 G5 HT is an advanced, high-speed MOVPE reactor that is ideal for the production of high-volume III-V compound semiconductor components. It offers superior process and layer control with excellent uniformity, stability, and repeatability, all in an intuitive and integrated unit.
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